P2003HV MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P2003HV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 1.9 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 27 nS
Cossⓘ - Capacitancia de salida: 73 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm
Encapsulados: SOP8
Búsqueda de reemplazo de P2003HV MOSFET
- Selecciónⓘ de transistores por parámetros
P2003HV datasheet
..1. Size:457K unikc
p2003hv.pdf 
P2003HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 8A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 8 ID Continuous Drain Current TA = 70 C 6 A IDM 40 Pulsed Drain Current1 IAS
9.1. Size:598K diodes
dmp2003ups.pdf
DMP2003UPS Green 20V P-CHANNEL ENHANCEMENT MODE MOSFET PowerDI5060-8 Product Summary Features ID Thermally Efficient Package-Cooler Running Applications BVDSS RDS(ON) TC = +25 C High Conversion Efficiency Low RDS(ON) Minimizes On State Losses 2.2m @ VGS = -10V -150A
9.2. Size:219K utc
up2003.pdf
UNISONIC TECHNOLOGIES CO., LTD UP2003 Power MOSFET 9A, 25V P-CHANNEL LOGIC LEVEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UP2003 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * RDS(ON)
9.3. Size:491K unikc
p2003evg.pdf
P2003EVG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7
9.4. Size:341K unikc
p2003bea.pdf
P2003BEA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 10A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS 20 TC = 25 C 28 TC = 100 C 18 ID Continuous Drain Current TA = 25 C 10 A TA =
9.5. Size:354K unikc
p2003kv.pdf
P2003KV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 22m @VGS = -10V -8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -8 ID Continuous Drain Current TA = 70 C -6 A IDM -40 Pulsed Drain Curren
9.6. Size:695K unikc
p2003nv.pdf
P2003NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 20m @VGS =10V 30V 8.8A N 25m @VGS = -10V -30V -8A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 30 VDS Drain-Source Voltage P -30 V N 20 VGS Gate-Source Voltage P 20 N 8.8 TA = 25 C P -8 ID Cont
9.7. Size:378K unikc
p2003ev8.pdf
P2003EV8 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -30V 20m @VGS = -10V -10A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -10 ID Continuous Drain Current TA = 70 C -8 A IDM -55 Pulsed Drain Cu
9.8. Size:505K unikc
p2003evt.pdf
P2003EVT P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A 100% UIS tested SOP- 08 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -9 ID Continuous Drain Current TC = 70 C -8 A IDM -32
9.10. Size:492K unikc
p2003etf.pdf
P2003ETF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -26A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -26 ID Continuous Drain Current TC = 100 C -16 A IDM -120 Pulsed Drai
9.11. Size:500K unikc
p2003bvg.pdf
P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 9A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 25 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A IDM 32 Pulsed Drain Current1 IAS
9.12. Size:475K unikc
p2003bt.pdf
P2003BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 39A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 39 ID Continuous Drain Current TC = 100 C 25 A IDM 120 Pulsed Drain Current1
9.13. Size:457K unikc
p2003ed.pdf
P2003ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -36A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -36 ID Continuous Drain Current TC = 100 C -23 A IDM -100 Pulsed Drain C
9.14. Size:468K unikc
p2003bdg.pdf
P2003BDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 25V 28A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 25 V VGS Gate-Source Voltage 20 TC= 25 C 28 ID Continuous Drain Current TC= 100 C 18 A IDM 90 Pulsed Drai
9.15. Size:499K unikc
p2003be.pdf
P2003BE N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 7A PDFN 3x3S ABSOLUTE MAXIMUM RATINGS (TJ = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TC = 25 C 25 TC = 100 C 15 ID Continuous Drain Current TA = 25 C 7 A TA = 70
9.16. Size:547K unikc
p2003bvt.pdf
P2003BVT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 9A 100% Rg tested 100% UIS tested SOP-8 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 TA = 25 C 9 ID Continuous Drain Current TA = 70 C 7 A ID
9.17. Size:530K unikc
p2003eea.pdf
P2003EEA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -28A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TC = 25 C -28 TC = 100 C -18 ID Continuous Drain Current2 TA = 25
9.18. Size:485K unikc
p2003eeaa.pdf
P2003EEAA P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -25A PDFN 3x3P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -25 TC = 100 C -16 ID Continuous Drain Current2 TA = 2
9.19. Size:475K unikc
p2003bv.pdf
P2003BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = 10V 30V 8.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 8.5 ID Continuous Drain Current TA = 70 C 6.8 A IDM 30 Pulsed Drain Current1 IAS Avalanche Current 17
9.20. Size:363K unikc
p2003ev.pdf
P2003EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 20m @VGS = -10V -30V -9A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 25 TA = 25 C -9 ID Continuous Drain Current TA = 70 C -7 A IDM -45 Pulsed Drain Curr
9.21. Size:312K niko-sem
p2003evg.pdf
P-Channel Logic Level Enhancement P2003EVG NIKO-SEM Mode Field Effect Transistor SOP-8 Halogen-Free & Lead-Free D 4 GATE PRODUCT SUMMARY 5,6,7,8 DRAIN 1,2,3 SOURCE V(BR)DSS RDS(ON) ID G -30 20m -9A S 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS -30 V Gate-Sou
Otros transistores... P2003ED, P2003EEA, P2003EEAA, P2003ETF, P2003EV, P2003EV8, P2003EVG, P2003EVT, 75N75, P2003KV, P2003NV, P2004EV, P2060ZTF, P2060ZTFS, P2103HVG, P2103NVG, P2202CM
