P2004EV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P2004EVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -40V 20m @VGS = -10V -8.7ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TA = 25 C-8.7IDContinuous Drain CurrentTA = 70 C-7AIDM-45Pulsed Drain C

DMP2004WKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage VGS(th)

DMP2004TKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level

DMP2004DWKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)

DMP2004VKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)

DMP2004DMKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)

DMP2004KP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage VGS(TH)

Spec. No. : C698S6R Issued Date : 2012.07.16 CYStech Electronics Corp. Revised Date : 2018.10.24 Page No. : 1/ 9 Dual P-CHANNEL MOSFET BVDSS -20V MTDP2004S6R ID@VGS=-4.5V, TA=25C -500mA RDSON@VGS=-4.5V, ID=-430mA 0.64(typ) RDSON@VGS=2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-10mA 1.7 (typ) Features Low on-resistance High ESD capability Hig