P2004EV
MOSFET. Datasheet pdf. Equivalent
Type Designator: P2004EV
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 2.5
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 8.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 50
nC
trⓘ - Rise Time: 20
nS
Cossⓘ -
Output Capacitance: 392
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02
Ohm
Package:
SOP8
P2004EV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P2004EV
Datasheet (PDF)
..1. Size:368K unikc
p2004ev.pdf 
P2004EVP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -40V 20m @VGS = -10V -8.7ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TA = 25 C-8.7IDContinuous Drain CurrentTA = 70 C-7AIDM-45Pulsed Drain C
9.1. Size:217K diodes
dmp2004wk.pdf
DMP2004WKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-323 Very Low Gate Threshold Voltage VGS(th)
9.2. Size:137K diodes
dmp2004tk.pdf
DMP2004TKP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database.Features Mechanical Data Low On-Resistance Case: SOT-523 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level
9.3. Size:148K diodes
dmp2004dwk.pdf
DMP2004DWKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage VGS(TH)
9.4. Size:142K diodes
dmp2004vk.pdf
DMP2004VKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(TH)
9.5. Size:217K diodes
dmp2004dmk.pdf
DMP2004DMKDUAL P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual P-Channel MOSFET Case: SOT-26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Very Low Gate Threshold Voltage VGS(th)
9.6. Size:142K diodes
dmp2004k.pdf
DMP2004KP-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT-23 Very Low Gate Threshold Voltage VGS(TH)
9.7. Size:632K cystek
mtdp2004s6r.pdf
Spec. No. : C698S6R Issued Date : 2012.07.16 CYStech Electronics Corp. Revised Date : 2018.10.24 Page No. : 1/ 9 Dual P-CHANNEL MOSFET BVDSS -20V MTDP2004S6R ID@VGS=-4.5V, TA=25C -500mA RDSON@VGS=-4.5V, ID=-430mA 0.64(typ) RDSON@VGS=2.5V, ID=-300mA 1.1 (typ) RDSON@VGS=-1.8V, ID=-10mA 1.7 (typ) Features Low on-resistance High ESD capability Hig
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