P8008BVA Todos los transistores

 

P8008BVA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P8008BVA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.8 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 14 nS
   Cossⓘ - Capacitancia de salida: 63 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm
   Paquete / Cubierta: SOP8
 

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P8008BVA Datasheet (PDF)

 ..1. Size:450K  unikc
 p8008bva.pdf pdf_icon

P8008BVA

P8008BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 3.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3.5IDContinuous Drain CurrentTA = 70 C2.8AIDM14Pulsed Drain Current

 ..2. Size:357K  niko-sem
 p8008bva.pdf pdf_icon

P8008BVA

P8008BVA N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.5A G : GATE GD : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA =

 7.1. Size:477K  unikc
 p8008bv.pdf pdf_icon

P8008BVA

P8008BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 3ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3IDContinuous Drain Current1TA = 100 C2AIDMPulsed Drain Curr

 8.1. Size:651K  unikc
 p8008bd.pdf pdf_icon

P8008BVA

P8008BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C15IDContinuous Drain CurrentTC = 100 C10AIDM60Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P2202CV , P2204ND5G , P2206BD , P2402OV , P2502IZG , P8008BD , P8008BDA , P8008BV , AO3407 , P8008HV , P8008HVA , P8010BD , P8010BIS , P8010BV , P8315AD , P8315ATF , P8315BD .

History: MP10N60EIF | APT8024JFLL | STD4NK100Z | 2SK4075-ZK | 2SJ450 | NTD65N03R-035 | JCS7N70R

 

 
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