P8008BVA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P8008BVA  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.8 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 25 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 63 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.068 Ohm

Encapsulados: SOP8

  📄📄 Copiar 

 Búsqueda de reemplazo de P8008BVA MOSFET

- Selecciónⓘ de transistores por parámetros

 

P8008BVA datasheet

 ..1. Size:450K  unikc
 p8008bva.pdf pdf_icon

P8008BVA

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 68m @VGS = 10V 80V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 14 Pulsed Drain Current

 ..2. Size:357K  niko-sem
 p8008bva.pdf pdf_icon

P8008BVA

P8008BVA N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.5A G GATE G D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA =

 7.1. Size:477K  unikc
 p8008bv.pdf pdf_icon

P8008BVA

P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = 10V 80V 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TA = 25 C 3 ID Continuous Drain Current1 TA = 100 C 2 A IDM Pulsed Drain Curr

 8.1. Size:651K  unikc
 p8008bd.pdf pdf_icon

P8008BVA

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = 10V 80V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Current1

MOSTRAR MÁS

Otros transistores... P2202CV, P2204ND5G, P2206BD, P2402OV, P2502IZG, P8008BD, P8008BDA, P8008BV, AO4407A, P8008HV, P8008HVA, P8010BD, P8010BIS, P8010BV, P8315AD, P8315ATF, P8315BD