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P8008BVA Spec and Replacement


   Type Designator: P8008BVA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Id| ⓘ - Maximum Drain Current: 3.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOP8

 P8008BVA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P8008BVA Specs

 ..1. Size:450K  unikc
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P8008BVA

P8008BVA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 68m @VGS = 10V 80V 3.5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TA = 25 C 3.5 ID Continuous Drain Current TA = 70 C 2.8 A IDM 14 Pulsed Drain Current... See More ⇒

 ..2. Size:357K  niko-sem
 p8008bva.pdf pdf_icon

P8008BVA

P8008BVA N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.5A G GATE G D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA = ... See More ⇒

 7.1. Size:477K  unikc
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P8008BVA

P8008BV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = 10V 80V 3A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TA = 25 C 3 ID Continuous Drain Current1 TA = 100 C 2 A IDM Pulsed Drain Curr... See More ⇒

 8.1. Size:651K  unikc
 p8008bd.pdf pdf_icon

P8008BVA

P8008BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80m @VGS = 10V 80V 15A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 80 V VGS Gate-Source Voltage 25 TC = 25 C 15 ID Continuous Drain Current TC = 100 C 10 A IDM 60 Pulsed Drain Current1 ... See More ⇒

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Detailed specifications: P2202CV , P2204ND5G , P2206BD , P2402OV , P2502IZG , P8008BD , P8008BDA , P8008BV , AO4407A , P8008HV , P8008HVA , P8010BD , P8010BIS , P8010BV , P8315AD , P8315ATF , P8315BD .

Keywords - P8008BVA MOSFET specs

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