All MOSFET. P8008BVA Datasheet

 

P8008BVA MOSFET. Datasheet pdf. Equivalent


   Type Designator: P8008BVA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3 V
   |Id|ⓘ - Maximum Drain Current: 3.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 14 nC
   trⓘ - Rise Time: 14 nS
   Cossⓘ - Output Capacitance: 63 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.068 Ohm
   Package: SOP8

 P8008BVA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

P8008BVA Datasheet (PDF)

 ..1. Size:450K  unikc
 p8008bva.pdf

P8008BVA P8008BVA

P8008BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 3.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3.5IDContinuous Drain CurrentTA = 70 C2.8AIDM14Pulsed Drain Current

 ..2. Size:357K  niko-sem
 p8008bva.pdf

P8008BVA P8008BVA

P8008BVA N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.5A G : GATE GD : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA =

 7.1. Size:477K  unikc
 p8008bv.pdf

P8008BVA P8008BVA

P8008BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 3ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3IDContinuous Drain Current1TA = 100 C2AIDMPulsed Drain Curr

 8.1. Size:651K  unikc
 p8008bd.pdf

P8008BVA P8008BVA

P8008BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C15IDContinuous Drain CurrentTC = 100 C10AIDM60Pulsed Drain Current1

 8.2. Size:736K  unikc
 p8008bda.pdf

P8008BVA P8008BVA

P8008BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 16ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C16IDContinuous Drain CurrentTC = 100 C10AIDM50Pulsed Drain Current1

 8.3. Size:345K  niko-sem
 p8008bda.pdf

P8008BVA P8008BVA

N-Channel Enhancement Mode P8008BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G80V 68m 16A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TC = 2

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FKBB3002 | IXTP50N085T | SST80R380S2 | SM3320NSQG | IXTP60N10T | STU3N62K3 | IPA60R280P7S

 

 
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