P8008HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P8008HV
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.9 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 3.8 nS
Cossⓘ - Capacitancia de salida: 104 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.08 Ohm
Paquete / Cubierta: SOP8
Búsqueda de reemplazo de P8008HV MOSFET
P8008HV Datasheet (PDF)
p8008hv.pdf

P8008HVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80V 80m @VGS = 10V 4ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C4IDContinuous Drain CurrentTA = 70 AC3IDM20Pulsed Drain Current1TA =
p8008hva.pdf

P8008HVADual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 3.2ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3.2IDContinuous Drain CurrentTA= 70 C2.5AIDM18Pulsed Drain Cur
p8008hva.pdf

P8008HVA Dual N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.2A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA = 25
tpcp8008-h.pdf

TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-sour
Otros transistores... P2204ND5G , P2206BD , P2402OV , P2502IZG , P8008BD , P8008BDA , P8008BV , P8008BVA , AO4468 , P8008HVA , P8010BD , P8010BIS , P8010BV , P8315AD , P8315ATF , P8315BD , P8503BMA .
History: FMP13N60E | AP9435GJ | SIHFR010
History: FMP13N60E | AP9435GJ | SIHFR010



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