P8008HV
MOSFET. Datasheet pdf. Equivalent
Type Designator: P8008HV
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 1.9
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 4
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 29
nC
trⓘ - Rise Time: 3.8
nS
Cossⓘ -
Output Capacitance: 104
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.08
Ohm
Package:
SOP8
P8008HV
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P8008HV
Datasheet (PDF)
..1. Size:357K unikc
p8008hv.pdf 
P8008HVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80V 80m @VGS = 10V 4ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C4IDContinuous Drain CurrentTA = 70 AC3IDM20Pulsed Drain Current1TA =
0.1. Size:458K unikc
p8008hva.pdf
P8008HVADual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 3.2ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3.2IDContinuous Drain CurrentTA= 70 C2.5AIDM18Pulsed Drain Cur
0.2. Size:390K niko-sem
p8008hva.pdf
P8008HVA Dual N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.2A G : GATE D : DRAIN S : SOURCE ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA = 25
9.1. Size:209K toshiba
tpcp8008-h.pdf
TPCP8008-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOS-H) TPCP8008-H High-Efficiency DC-DC Converter Applications Notebook PC Applications Unit: mmPortable Equipment Applications 0.33 0.05 M 0.05 A 8 5 Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 3.8 nC (typ.) Low drain-sour
9.2. Size:112K samhop
sp8008.pdf
GreenProductSP8008aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) TypRugged and reliable.3.9 @ VGS=10VSuface Mount Package.30V 28A 4.2 @ VGS=4.5V ESD Protected.5.2 @ VGS=2.5V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3
9.3. Size:450K unikc
p8008bva.pdf
P8008BVAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 3.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3.5IDContinuous Drain CurrentTA = 70 C2.8AIDM14Pulsed Drain Current
9.4. Size:477K unikc
p8008bv.pdf
P8008BVN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 3ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TA = 25 C3IDContinuous Drain Current1TA = 100 C2AIDMPulsed Drain Curr
9.5. Size:651K unikc
p8008bd.pdf
P8008BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID80m @VGS = 10V80V 15ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C15IDContinuous Drain CurrentTC = 100 C10AIDM60Pulsed Drain Current1
9.6. Size:736K unikc
p8008bda.pdf
P8008BDAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID68m @VGS = 10V80V 16ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 80VVGSGate-Source Voltage 25TC = 25 C16IDContinuous Drain CurrentTC = 100 C10AIDM50Pulsed Drain Current1
9.7. Size:357K niko-sem
p8008bva.pdf
P8008BVA N-Channel Enhancement Mode SOP-8 NIKO-SEM Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 80V 68m 3.5A G : GATE GD : DRAIN S : SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TA =
9.8. Size:345K niko-sem
p8008bda.pdf
N-Channel Enhancement Mode P8008BDA NIKO-SEM Field Effect Transistor TO-252 Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 1. GATE G80V 68m 16A 2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 80 V Gate-Source Voltage VGS 25 V TC = 2
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