P3055LLG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P3055LLG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 3 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 25 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 114 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.072 Ohm

Encapsulados: SOT223

  📄📄 Copiar 

 Búsqueda de reemplazo de P3055LLG MOSFET

- Selecciónⓘ de transistores por parámetros

 

P3055LLG datasheet

 ..1. Size:354K  unikc
 p3055llg.pdf pdf_icon

P3055LLG

P3055LLG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 25V 72m @VGS = 10V 6A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage VGS 20 V TA = 25 C 6 ID Continuous Drain Current TA = 70 C 3.3 A IDM 21 Pulsed Drain Current2 IAS Avalanche Current 12 Av

 8.1. Size:51K  philips
 php3055l 2.pdf pdf_icon

P3055LLG

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FET GENERAL DESCRIPTION QUICK REFERENCE DATA N-channel enhancement mode logic SYMBOL PARAMETER MAX. UNIT level field-effect power transistor in a plastic envelope featuring high VDS Drain-source voltage 60 V avalanche energy capability, stable ID Drain current (DC) 12 A blocking voltage, fast switch

 8.2. Size:414K  fairchild semi
 rfd3055le rfd3055lesm rfp3055le.pdf pdf_icon

P3055LLG

RFD3055LE, RFD3055LESM, RFP3055LE Data Sheet January 2002 11A, 60V, 0.107 Ohm, Logic Level, Features N-Channel Power MOSFETs 11A, 60V These N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107 manufactured using the latest manufacturing process Temperature Compensating PSPICE Model technology. This process, which uses feature sizes approaching those of LSI

 8.3. Size:385K  unikc
 p3055ldg.pdf pdf_icon

P3055LLG

P3055LDG N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 90m @VGS = 10V 25V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC= 25 C 12 ID Continuous Drain Current TC= 100 C 8 A IDM 45 Pulsed Drain Current1 EAS Avalanche Energy

MOSTRAR MÁS

Otros transistores... P8315BD, P8503BMA, P8503BMG, P3003EDG, P3004BD, P3004ND5G, P3010BV, P3055LDG, IRF1404, P3202CMA, P3202CMG, P3203CMG, P3203EVG, P3204HV, P3304EV, P3304QV, P3503EVG