P3055LLGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID25V 72m @VGS = 10V 6A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSGate-Source Voltage VGS20 VTA = 25 C6IDContinuous Drain CurrentTA = 70 C3.3AIDM21Pulsed Drain Current2IASAvalanche Current 12Av

Philips Semiconductors Product specification PowerMOS transistor PHP3055L Logic level FETGENERAL DESCRIPTION QUICK REFERENCE DATAN-channel enhancement mode logic SYMBOL PARAMETER MAX. UNITlevel field-effect power transistor in aplastic envelope featuring high VDS Drain-source voltage 60 Vavalanche energy capability, stable ID Drain current (DC) 12 Ablocking voltage, fast switch

RFD3055LE, RFD3055LESM, RFP3055LEData Sheet January 200211A, 60V, 0.107 Ohm, Logic Level, FeaturesN-Channel Power MOSFETs 11A, 60VThese N-Channel enhancement-mode power MOSFETs are rDS(ON) = 0.107manufactured using the latest manufacturing process Temperature Compensating PSPICE Modeltechnology. This process, which uses feature sizes approaching those of LSI

P3055LDGN-Channel Logic Level Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID90m @VGS = 10V25V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC= 25 C12IDContinuous Drain CurrentTC= 100 C8 AIDM45Pulsed Drain Current1EASAvalanche Energy

P3055LDGwww.VBsemi.twN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.007 at VGS = 10 V 5030 25 nC0.009 at VGS = 4.5 V 40APPLICATIONSD OR-ing ServerTO-252 DC/DCGG D SSTop ViewN-Channel MOSFETABSOL