PZ0703EV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: PZ0703EV  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2.5 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 29 nS

Cossⓘ - Capacitancia de salida: 885 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: SOP8

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PZ0703EV datasheet

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PZ0703EV

PZ0703EV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7m @VGS = -10V -30V -15A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -15 ID Continuous Drain Current TA = 70 C -11 A IDM -69 Pulsed Drain C

 7.1. Size:510K  1
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PZ0703EV

PZ0703EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 7m @VGS = -10V -30V -70A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -70 ID Continuous Drain Current3 TC = 100 C -56 IDM -150

 7.2. Size:551K  unikc
pz0703ed.pdf pdf_icon

PZ0703EV

PZ0703ED P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 7.5m @VGS = -10V -70A -30V TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 V TC= 25 C -70 ID Continuous Drain Current2,3 TC= 100 C -44 A IDM -160 Pulsed Dr

 7.3. Size:525K  unikc
pz0703ek.pdf pdf_icon

PZ0703EV

PZ0703EK P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID3 7m @VGS = -10V -30V -70A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TC = 25 C -70 ID Continuous Drain Current3 TC = 100 C -56 IDM -150

Otros transistores... P3304EV, P3304QV, P3503EVG, P3710AV, P3710BD, P3710BV, PZ0703ED, PZ0703EK, 7N65, PZ1003EK, PZ1203EV, PZ2003EEA, PZ2003EV, PZ2103NV, PZ2503HV, PZ2806HV, PZ2N7002M