IRF130 Todos los transistores

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18 14A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique process

PD - 94591 AUTOMOTIVE MOSFET IRF1302 Benefits HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 20V Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching RDS(on) = 4.0m G Repetitive Avalanche Allowed up to Tjmax ID = 180A S Description Specifically designed for Automotive applications, this Stripe Planar

PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance D Dynamic dv/dt Rating VDSS = 20V 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.0m G ID = 174A S Description Specifically designed for Automotive applications, this St

IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET FOR HI REL APPLICATIONS ! VDSS 100V ID(cont) 11A RDS(on) 0.19 FEATURES HERMETICALLY SEALED

IRF130SMD05DSGN MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET 7.54 (0.296) FOR HI REL 0.76 (0.030) min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. APPLICATIONS 0.127 (0.005) 1 3 VDSS 100V ID(cont) 11A 2 RDS(on) 0.19 FEATURES 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020) max. 7.26 (0.286)