IRF130 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF130
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 75 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 14 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 35(max) nC
Tiempo de subida (tr): 80(max) nS
Conductancia de drenaje-sustrato (Cd): 250 pF
Resistencia entre drenaje y fuente RDS(on): 0.18 Ohm
Paquete / Cubierta: TO3
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IRF130 Datasheet (PDF)
2n6756 irf130.pdf
PD - 90333FIRF130REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756HEXFETTRANSISTORS JANTXV2N6756THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542]100V, N-CHANNELProduct Summary Part Number BVDSS RDS(on) IDIRF130 100V 0.18 14AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique process
irf1302s.pdf
PD - 94520AUTOMOTIVE MOSFETIRF1302SIRF1302LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-ResistanceD Dynamic dv/dt RatingVDSS = 20V 175C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.0mGID = 174ASDescriptionSpecifically designed for Automotive applications, this St
irf1302.pdf
PD - 94591AUTOMOTIVE MOSFETIRF1302BenefitsHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 20V Dynamic dv/dt Rating 175C Operating Temperature Fast SwitchingRDS(on) = 4.0mG Repetitive Avalanche Allowed up to TjmaxID = 180A SDescriptionSpecifically designed for Automotive applications, this Stripe Planar
irf130smd05.pdf
IRF130SMD05NIRFN130SMD05MECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS 100VID(cont) 11ARDS(on) 0.19 FEATURES HERMETICALLY SEALED
irf130smd.pdf
IRF130SMDMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET FOR HIREL APPLICATIONS !VDSS 100VID(cont) 11ARDS(on) 0.19FEATURES HERMETICALLY SEALED SIMPLE DRIVE REQUIREMENTS
irf130smd05dsg.pdf
IRF130SMD05DSGNMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET7.54 (0.296)FOR HIREL0.76 (0.030)min.3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max.APPLICATIONS 0.127 (0.005)1 3VDSS 100VID(cont) 11A2RDS(on) 0.19FEATURES 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020) HERMETICALLY SEALED 0.50 (0.020)max.7.26 (0.286)
Otros transistores... IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF2807 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 .
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JNFH20N60E | JNFH20N60C | JFDX5N50D | JFUX5N50D | JFQM3N150C | JFQM3N120E | JFFM9N90C | JFPC9N90C | JFFM9N50C | JFPC9N50C | JFFM8N80C | JFPC8N80C | JFPC8N65D | JFPC8N65C | JFFM8N60C | JFPC8N60C