All MOSFET. IRF130 Datasheet

 

IRF130 MOSFET. Datasheet pdf. Equivalent

Type Designator: IRF130

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 150 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Drain Current |Id|: 45 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 35 nC

Drain-Source Capacitance (Cd): 650 pF

Maximum Drain-Source On-State Resistance (Rds): 0.21 Ohm

Package: TO3

IRF130 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IRF130 Datasheet (PDF)

1.1. irf130smd.pdf Size:22K _update

IRF130
IRF130

IRF130SMD MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS ! VDSS 100V ID(cont) 11A RDS(on) 0.19 FEATURES • HERMETICALLY SEALED • SIMPLE DRIVE REQUIREMENTS

1.2. irf1302s.pdf Size:232K _update

IRF130
IRF130

PD - 94520 AUTOMOTIVE MOSFET IRF1302S IRF1302L Benefits ● Advanced Process Technology HEXFET® Power MOSFET ● Ultra Low On-Resistance D ● Dynamic dv/dt Rating VDSS = 20V ● 175°C Operating Temperature ● Fast Switching ● Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.0mΩ G ID = 174A† S Description Specifically designed for Automotive applications, this St

 1.3. irf130smd05.pdf Size:24K _update

IRF130
IRF130

IRF130SMD05N IRFN130SMD05 MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET FOR HI–REL APPLICATIONS ! VDSS 100V ID(cont) 11A RDS(on) 0.19 FEATURES • HERMETICALLY SEALED

1.4. irf130smd05dsg.pdf Size:23K _update

IRF130
IRF130

IRF130SMD05DSGN MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET 7.54 (0.296) FOR HI–REL 0.76 (0.030) min. 3.175 (0.125) 2.41 (0.095) 2.41 (0.095) Max. APPLICATIONS 0.127 (0.005) 1 3 VDSS 100V ID(cont) 11A 2 Ω RDS(on) 0.19Ω FEATURES 0.127 (0.005) 16 PLCS 0.127 (0.005) 0.50(0.020) • HERMETICALLY SEALED 0.50 (0.020) max. 7.26 (0.286) •

 1.5. irf1302.pdf Size:523K _international_rectifier

IRF130
IRF130

PD - 94591 AUTOMOTIVE MOSFET IRF1302 Benefits HEXFET Power MOSFET ? Advanced Process Technology D ? Ultra Low On-Resistance VDSS = 20V ? Dynamic dv/dt Rating ? 175C Operating Temperature ? Fast Switching RDS(on) = 4.0m? G ? Repetitive Avalanche Allowed up to Tjmax ID = 180A S Description Specifically designed for Automotive applications, this Stripe Planar design of HEXFET P

1.6. 2n6756 irf130.pdf Size:147K _international_rectifier

IRF130
IRF130

PD - 90333F IRF130 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6756 HEXFET?TRANSISTORS JANTXV2N6756 THRU-HOLE (TO-204AA/AE) [REF:MIL-PRF-19500/542] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF130 100V 0.18? 14A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this

Datasheet: IRF054 , IRF1010E , IRF1010EL , IRF1010ES , IRF1010N , IRF1010NL , IRF1010NS , IRF1104 , IRF1405 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF142 , IRF143 .

 
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