P2710AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P2710ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID32m @VGS = 10V100V 34ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C34IDContinuous Drain Current1TC = 100 C22AIDM100Pulsed Drain Curre

November 2007FDP2710tm250V N-Channel PowerTrench MOSFETGeneral Description DescriptionThis N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 Vductors advanced PowerTrench process that has been espe- Fast switching speedcially tailored to minimize the on-state resistance and yet Low gate chargemaintain superior switching p

February 2010FDP2710_F085N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General DescriptionThis N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductors advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10Vespecially tailored to minimize the on-state resistance and yet maintain superior switc

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDP2710-F085N-Channel PowerTrench MOSFET250V, 50A, 47m General DescriptionThis N-Channel MOSFET is produced using ON Semi-Features conductors advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50Ayet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10VAppl

isc N-Channel MOSFET Transistor FDP2710FEATURESWith TO-220 packagingDrain Source Voltage-: V 250VDSSStatic drain-source on-resistance:RDS(on) 42.5m@V =10VGS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25