P2710AD - Даташиты. Аналоги. Основные параметры

P2710AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 32m @VGS = 10V 100V 34A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 34 ID Continuous Drain Current1 TC = 100 C 22 A IDM 100 Pulsed Drain Curre

November 2007 FDP2710 tm 250V N-Channel PowerTrench MOSFET General Description Description This N-Channel MOSFET is produced using Fairchild Semicon- 50A, 250V, RDS(on) = 36.3m @VGS = 10 V ductor s advanced PowerTrench process that has been espe- Fast switching speed cially tailored to minimize the on-state resistance and yet Low gate charge maintain superior switching p

February 2010 FDP2710_F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m Features General Description This N-Channel MOSFET is produced using Fairchil Semi- Typ rDS(on) = 38m at VGS = 10V, ID = 50A conductor s advanced PowerTrench process that has been Typ Qg(TOT) = 78nC at VGS = 10V especially tailored to minimize the on-state resistance and yet maintain superior switc

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

FDP2710-F085 N-Channel PowerTrench MOSFET 250V, 50A, 47m General Description This N-Channel MOSFET is produced using ON Semi- Features conductor s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and Typ rDS(on) = 38m at VGS = 10V, ID = 50A yet maintain superior switching performance. Typ Qg(TOT) = 78nC at VGS = 10V Appl