P2804BI MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: P2804BI
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 48 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 33 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 89 nS
   Cossⓘ - Capacitancia de salida: 170 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.028 Ohm
   Paquete / Cubierta: TO251

Búsqueda de reemplazo de MOSFET P2804BI

P2804BI Datasheet (PDF)

..1. Size:464K unikc
p2804bi.pdf

P2804BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V40V 33ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C33IDContinuous Drain CurrentTC = 100 C20AIDM120Pulsed Drain Current1IASAvalanche Current 22EA

8.1. Size:378K unikc
p2804bvg.pdf

P2804BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40V 28m @VGS = 10V 7.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TA = 25 C7.5IDContinuous Drain CurrentTA = 70 AC6.5IDM20Pulsed Drain Current

8.2. Size:402K unikc
p2804bdg.pdf

P2804BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V40V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM75Pulsed Drain Current1IASAvalanche Current 26EA

9.1. Size:803K unikc
p2804nd5g.pdf

P2804ND5GN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel28m @VGS =10V40V 21A N48m @VGS = -10V-40V -16A PTO-252-5ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 21TC = 25 CP -16ID

9.2. Size:674K unikc
p2804nvg.pdf

P2804NVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel28m @VGS = 10V40V 7A N65m @VGS = -10V-40V -6A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -6IDContin

9.3. Size:488K unikc
p2804hvg.pdf

P2804HVGDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V40V 7ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TA = 25 C7IDContinuous Drain CurrentTA= 70 C6 AIDM40Pulsed Drain Current1

9.4. Size:443K kia
knp2804a knb2804a knd2804a.pdf

150A40VKNX2804AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =3.0m(typ.)@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gat

9.5. Size:284K kia
knp2804c knb2804c.pdf

150A40VN-CHANNEL MOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advanced Trench MOS technology Excellent QgxRDS(on) product(FOM) Extremely low on-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. Pin configurationPin Func

9.6. Size:181K kia
knp2804c.pdf

150A40VN-CHANNELMOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advancedTrench MOStechnology Excellent QgxRDS(on) product(FOM) Extremely lowon-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. PinconfigurationPin Function1 Gate2 Drain3 S

9.7. Size:243K niko-sem
p2804nd5g.pdf

P2804ND5G N- & P-Channel Enhancement Mode NIKO-SEM TO-252-5 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D1D228m N-Channel 40V 21A G1 G2G : GATE 48m -16A P-Channel -40V D : DRAIN S : SOURCE S1 S2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channe

9.8. Size:674K niko-sem
p2804nvg.pdf

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