P2804BI
MOSFET. Datasheet pdf. Equivalent
Type Designator: P2804BI
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 48
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 33
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 18
nC
trⓘ - Rise Time: 89
nS
Cossⓘ -
Output Capacitance: 170
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.028
Ohm
Package:
TO251
P2804BI
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P2804BI
Datasheet (PDF)
..1. Size:464K unikc
p2804bi.pdf 
P2804BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V40V 33ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C33IDContinuous Drain CurrentTC = 100 C20AIDM120Pulsed Drain Current1IASAvalanche Current 22EA
8.1. Size:378K unikc
p2804bvg.pdf
P2804BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID40V 28m @VGS = 10V 7.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TA = 25 C7.5IDContinuous Drain CurrentTA = 70 AC6.5IDM20Pulsed Drain Current
8.2. Size:402K unikc
p2804bdg.pdf
P2804BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V40V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM75Pulsed Drain Current1IASAvalanche Current 26EA
9.1. Size:803K unikc
p2804nd5g.pdf
P2804ND5GN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel28m @VGS =10V40V 21A N48m @VGS = -10V-40V -16A PTO-252-5ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 21TC = 25 CP -16ID
9.2. Size:674K unikc
p2804nvg.pdf
P2804NVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel28m @VGS = 10V40V 7A N65m @VGS = -10V-40V -6A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -6IDContin
9.3. Size:488K unikc
p2804hvg.pdf
P2804HVGDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID28m @VGS = 10V40V 7ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 40VVGSGate-Source Voltage 20TA = 25 C7IDContinuous Drain CurrentTA= 70 C6 AIDM40Pulsed Drain Current1
9.4. Size:443K kia
knp2804a knb2804a knd2804a.pdf
150A40VKNX2804AN-CHANNELMOSFETKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1.General Features Proprietary NewTrenchTechnology R =3.0m(typ.)@V =10VDS(ON),typ. GS LowGate Charge Minimize Switching Loss Fast Recovery Body Diode2.Applications High efficiency DC/DCconverters Synchronous Rectification UPSInverter3. PinconfigurationPin Function1 Gat
9.5. Size:284K kia
knp2804c knb2804c.pdf
150A40VN-CHANNEL MOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advanced Trench MOS technology Excellent QgxRDS(on) product(FOM) Extremely low on-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. Pin configurationPin Func
9.6. Size:181K kia
knp2804c.pdf
150A40VN-CHANNELMOSFETKNX2804CKIAKIAKIASEMICONDUCTORSSEMICONDUCTORSSEMICONDUCTORS1. Features R =3.0m(typ.)@V =10VDS(ON),typ. GS Uses CRM(CQ) advancedTrench MOStechnology Excellent QgxRDS(on) product(FOM) Extremely lowon-resistance RDS(on)2. Application Motor control and drive Battery management UPS3. PinconfigurationPin Function1 Gate2 Drain3 S
9.7. Size:243K niko-sem
p2804nd5g.pdf
P2804ND5G N- & P-Channel Enhancement Mode NIKO-SEM TO-252-5 Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D1D228m N-Channel 40V 21A G1 G2G : GATE 48m -16A P-Channel -40V D : DRAIN S : SOURCE S1 S2ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL N-Channel P-Channe
9.8. Size:674K niko-sem
p2804nvg.pdf
P2804NVGN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel28m @VGS = 10V40V 7A N65m @VGS = -10V-40V -6A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 40VDSDrain-Source VoltageP -40VN 20VGSGate-Source VoltageP 20N 7TA = 25 CP -6IDContin
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