P2806BV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current TA = 70 C 5 A IDM 35 Pulsed Drain Current1 IAS

P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 30 ID Continuous Drain Current TC = 100 C 19 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 30 EA

P2806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 27A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 27 ID Continuous Drain Current TC = 100 C 17 A IDM 105 Pulsed Drain Current1 IAS Avalanche Current 29 E

P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 34 ID Continuous Drain Current TC = 100 C 21 A IDM 110 Pulsed Drain Current1 IAS Avalanche Current 29 EAS

P2806HV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 28m @VGS = 10V 6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TA = 25 C 6 ID Continuous Drain Current TA = 70 C 5 A IDM 30 Pulsed Drain Current1 IAS

P2806HV www.VBsemi.com Dual N-Channel 60 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) 60 100 % Rg and UIS tested RDS(on) ( ) at VGS = 10 V 0.040 RDS(on) ( ) at VGS = 4.5 V 0.055 ID (A) per leg 7 Configuration Dual SO-8 Dual D2 D1 D2 D2 5 D1 6 D1 7 8 G1 G2 4 G2 3 3 S1 S2 S2 S2 2 2 G G1 1 1 N-Channel MOSFET N-Channel