P2806BV Datasheet. Specs and Replacement

Type Designator: P2806BV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 22 nS

Cossⓘ - Output Capacitance: 158 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOP8

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P2806BV substitution

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P2806BV datasheet

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 p2806bv.pdf pdf_icon

P2806BV

P2806BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 7A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V VGS Gate-Source Voltage 20 TA = 25 C 7 ID Continuous Drain Current TA = 70 C 5 A IDM 35 Pulsed Drain Current1 IAS ... See More ⇒

 8.1. Size:664K  unikc
 p2806bd.pdf pdf_icon

P2806BV

P2806BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 28m @VGS = 10V 60V 30A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 30 ID Continuous Drain Current TC = 100 C 19 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 30 EA... See More ⇒

 9.1. Size:380K  unikc
 p2806atf.pdf pdf_icon

P2806BV

P2806ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 27A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 27 ID Continuous Drain Current TC = 100 C 17 A IDM 105 Pulsed Drain Current1 IAS Avalanche Current 29 E... See More ⇒

 9.2. Size:345K  unikc
 p2806at.pdf pdf_icon

P2806BV

P2806AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 30m @VGS = 10V 34A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 34 ID Continuous Drain Current TC = 100 C 21 A IDM 110 Pulsed Drain Current1 IAS Avalanche Current 29 EAS... See More ⇒

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Detailed specifications: P2804BI, P2804BVG, P2804HVG, P2804ND5G, P2804NVG, P2806AT, P2806ATF, P2806BD, AO4407A, P2806HV, P5102FM, P5102FM6, P5102FMA, P5102FMNV, P5103EAG, P5103EMA, P5103EMG

Keywords - P2806BV MOSFET specs

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