P5102FM Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P5102FM  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V

|Id|ⓘ - Corriente continua de drenaje: 3.5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 36 nS

Cossⓘ - Capacitancia de salida: 185 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: SOT23

  📄📄 Copiar 

 Búsqueda de reemplazo de P5102FM MOSFET

- Selecciónⓘ de transistores por parámetros

 

P5102FM datasheet

 ..1. Size:539K  unikc
 p5102fm.pdf pdf_icon

P5102FM

P5102FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -4.5V -20V -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 A C -2.8 IDM -21 Pulsed Drain

 ..2. Size:363K  niko-sem
 p5102fm.pdf pdf_icon

P5102FM

P5102FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -20V 45m @VGS = -4.5V -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 A C -2.8 IDM -21 Pulsed Drain C

 0.1. Size:529K  unikc
 p5102fmnv.pdf pdf_icon

P5102FM

P5102FMNV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -4.5V -20V -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 A C -2.8 IDM -21 Pulsed Drai

 0.2. Size:483K  unikc
 p5102fm6.pdf pdf_icon

P5102FM

P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -4.5V -20V -4.2A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -4.2 ID Continuous Drain Current TA = 70 C -3.3 A IDM -21 Pulsed Dra

MOSTRAR MÁS

Otros transistores... P2804HVG, P2804ND5G, P2804NVG, P2806AT, P2806ATF, P2806BD, P2806BV, P2806HV, IRFP064N, P5102FM6, P5102FMA, P5102FMNV, P5103EAG, P5103EMA, P5103EMG, P5503QV, P5504EDG