P5102FMA Todos los transistores

 

P5102FMA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P5102FMA
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
   |Id|ⓘ - Corriente continua de drenaje: 3.5 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 36 nS
   Cossⓘ - Capacitancia de salida: 185 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: SOT23

 Búsqueda de reemplazo de MOSFET P5102FMA

 

P5102FMA Datasheet (PDF)

 ..1. Size:790K  unikc
p5102fma.pdf pdf_icon

P5102FMA

P5102FMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -4.5V -20V -3.5A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 A C -2.8 IDM -21 Pulsed Dra

 7.1. Size:539K  unikc
p5102fm.pdf pdf_icon

P5102FMA

P5102FM P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -4.5V -20V -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 A C -2.8 IDM -21 Pulsed Drain

 7.2. Size:529K  unikc
p5102fmnv.pdf pdf_icon

P5102FMA

P5102FMNV P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 45m @VGS = -4.5V -20V -3.5A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -3.5 ID Continuous Drain Current TA = 70 A C -2.8 IDM -21 Pulsed Drai

 7.3. Size:483K  unikc
p5102fm6.pdf pdf_icon

P5102FMA

P5102FM6 P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -4.5V -20V -4.2A SOT-23-6 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage 8 TA = 25 C -4.2 ID Continuous Drain Current TA = 70 C -3.3 A IDM -21 Pulsed Dra

Otros transistores... P2804NVG , P2806AT , P2806ATF , P2806BD , P2806BV , P2806HV , P5102FM , P5102FM6 , IRF730 , P5102FMNV , P5103EAG , P5103EMA , P5103EMG , P5503QV , P5504EDG , P5504EVG , P5506BDG .

 

 
Back to Top

 


social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: AP2714SD | AP2714QD | AP25P30Q | AP25P06Q | AP25P06K | AP25N06Q | AP25N06K | AP2335 | AP2318A | AP2317SD | AP2317QD | AP2317A | AP2316 | AP2310 | AP2301B | AP20P30S

 

 

 
Back to Top

 

Popular searches

bc327-40 | tip125 | a992 transistor | 2sa913 | 2sc711 datasheet | bu4508dx | 2sc1364 | 2sc2320

 


 
.