P5103EAG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P5103EAG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 120 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.051 Ohm

Encapsulados: TSOP6

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P5103EAG datasheet

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 p5103eag.pdf pdf_icon

P5103EAG

P5103EAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -5A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 VGS Gate-Source Voltage 20 V Drain-Gate Voltage (RGS=20K VDG -30 TA = 25 C -5 ID Continuous Drain Current TA = 7

 8.1. Size:755K  unikc
 p5103emg.pdf pdf_icon

P5103EAG

P5103EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -3.8A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -3.8 ID Continuous Drain Current TA = 70 A C -3 IDM -20 Pul

 8.2. Size:430K  unikc
 p5103ema.pdf pdf_icon

P5103EAG

P5103EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -3.8A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -3.8 ID Continuous Drain Current TA = 70 A C -3 IDM -20 Pulsed Drain

 9.1. Size:302K  cystek
 mtp5103j3.pdf pdf_icon

P5103EAG

Spec. No. C400J3 Issued Date 2012.02.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP5103J3 ID -23A 35m (typ.) RDSON@VGS=-10V, ID=-10A 57m (typ.) Features RDSON@VGS=-4.5V, ID=-5A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package

MOSTRAR MÁS

Otros transistores... P2806ATF, P2806BD, P2806BV, P2806HV, P5102FM, P5102FM6, P5102FMA, P5102FMNV, IRF3205, P5103EMA, P5103EMG, P5503QV, P5504EDG, P5504EVG, P5506BDG, P5506BVG, P5506HVG