P5103EAG - Даташиты. Аналоги. Основные параметры

P5103EAG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -5A TSOP- 06 ABSOLUTE MAXIMUM RATINGS (TC = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 VGS Gate-Source Voltage 20 V Drain-Gate Voltage (RGS=20K VDG -30 TA = 25 C -5 ID Continuous Drain Current TA = 7

P5103EMG P-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -3.8A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -3.8 ID Continuous Drain Current TA = 70 A C -3 IDM -20 Pul

P5103EMA P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 51m @VGS = -10V -30V -3.8A SOT-23(S) ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -30 V VGS Gate-Source Voltage 20 TA = 25 C -3.8 ID Continuous Drain Current TA = 70 A C -3 IDM -20 Pulsed Drain

Spec. No. C400J3 Issued Date 2012.02.07 CYStech Electronics Corp. Revised Date 2013.12.26 Page No. 1/8 P-Channel Logic Level Enhancement Mode Power MOSFET BVDSS -30V MTP5103J3 ID -23A 35m (typ.) RDSON@VGS=-10V, ID=-10A 57m (typ.) Features RDSON@VGS=-4.5V, ID=-5A Low Gate Charge Simple Drive Requirement Pb-free lead plating & Halogen-free package

Spec. No. C400N3 CYStech Electronics Corp. Issued Date 2011.11.28 Revised Date 2017.06.23 Page No. 1/9 P-Channel Enhancement Mode MOSFET BVDSS -30V ID @TA=25 C , VGS=-10V -4.5A MTP5103N3 41m VGS=-10V, ID=-4.5A RDSON(TYP) 60m VGS=-4.5V, ID=-3.5A Features Low gate charge Compact and low profile SOT-23 package Advanced trench process technolog