P5504EDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P5504EDGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS = -10V-40V -21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 20TC = 25 C-21IDContinuous Drain CurrentTC = 100 AC-13IDM-39Pulsed Drain Cu

P5504EDGwww.VBsemi.twP-Channel 4 0 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET power MOSFETVDS (V) -40 Package with low thermal resistanceRDS(on) () at VGS = -10 V 0.012 100 % Rg and UIS testedRDS(on) () at VGS = -4.5 V 0.015ID (A) -50Configuration SingleTO-252SGDDG SP-Channel MOSFETTop ViewABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl

P5504EVGP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID -40V 55m @VGS = -10V -6ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -40VVGSGate-Source Voltage 25TA = 25 C-6IDContinuous Drain CurrentTA = 70 AC-4.8IDM-20Pulsed Drain Cur

MXP5504CT Datasheet55V N-Channel MOSFETApplications:a Power Supply VDS RDS(ON)(MAX)ID DC-DC Converters 55V 4m 144AFeatures: Lead Free Low RDS(ON) to Minimize Conductive Loss Low Gate Charge for Fast Switching Application Optimized V(BR)DSS CapabilityOrdering InformationPark Number Package BrandMXP5504CT TO-220 MXPAbsolute Maximum Ratings TC=25