P5504EDG Spec and Replacement
Type Designator: P5504EDG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 41 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 21 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.7 nS
Cossⓘ - Output Capacitance: 198 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
Package: TO252
P5504EDG Transistor Equivalent Substitute - MOSFET Cross-Reference Search
P5504EDG Specs
p5504edg.pdf
P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS = -10V -40V -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -21 ID Continuous Drain Current TC = 100 A C -13 IDM -39 Pulsed Drain Cu... See More ⇒
p5504edg.pdf
P5504EDG www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl... See More ⇒
p5504evg.pdf
P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 55m @VGS = -10V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 25 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -4.8 IDM -20 Pulsed Drain Cur... See More ⇒
Detailed specifications: P5102FM , P5102FM6 , P5102FMA , P5102FMNV , P5103EAG , P5103EMA , P5103EMG , P5503QV , IRF540N , P5504EVG , P5506BDG , P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG .
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