P5504EDG Datasheet: MOSFET, P-Ch, 40V, 21A. Full specification with pinout and replacement list

P5504EDG Datasheet. Specs and Replacement

Type Designator: P5504EDG 📄📄

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 41 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 21 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.7 nS

Cossⓘ - Output Capacitance: 198 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm

Package: TO252

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P5504EDG datasheet

..1. Size:490K unikc
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P5504EDG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS = -10V -40V -21A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 20 TC = 25 C -21 ID Continuous Drain Current TC = 100 A C -13 IDM -39 Pulsed Drain Cu... See More ⇒

..2. Size:887K cn vbsemi
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P5504EDG www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unl... See More ⇒

8.1. Size:356K unikc
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P5504EVG P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID -40V 55m @VGS = -10V -6A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -40 V VGS Gate-Source Voltage 25 TA = 25 C -6 ID Continuous Drain Current TA = 70 A C -4.8 IDM -20 Pulsed Drain Cur... See More ⇒

9.1. Size:181K maxpower
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