P5506BDG Todos los transistores

 

P5506BDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P5506BDG
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 22 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm
   Paquete / Cubierta: TO252
 

 Búsqueda de reemplazo de P5506BDG MOSFET

   - Selección ⓘ de transistores por parámetros

 

P5506BDG Datasheet (PDF)

 ..1. Size:478K  unikc
 p5506bdg.pdf pdf_icon

P5506BDG

P5506BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS = 10V60V 22ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C22IDContinuous Drain CurrentTC = 100 AC18IDM80Pulsed Drain Current1

 7.1. Size:215K  niko-sem
 p5506bda.pdf pdf_icon

P5506BDG

N-Channel Enhancement Mode P5506BDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 15A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 8.1. Size:493K  unikc
 p5506bvg.pdf pdf_icon

P5506BDG

P5506BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS =10V 60V 5.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20Tc = 25 C5.5IDContinuous Drain Current1Tc = 70 AC4.5IDMPulsed Drain Current 2

 8.2. Size:240K  niko-sem
 p5506bva.pdf pdf_icon

P5506BDG

N-Channel Enhancement Mode P5506BVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 55m 4.5A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25

MOSTRAR MÁS

Otros transistores... P5102FMA , P5102FMNV , P5103EAG , P5103EMA , P5103EMG , P5503QV , P5504EDG , P5504EVG , 50N06 , P5506BVG , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG , P2904BD , P5010AV .

History: 2SJ661-DL-E

 

 
Back to Top

 


 
.