P5506BDG Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P5506BDG  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 60 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 22 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 80 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.055 Ohm

Encapsulados: TO252

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P5506BDG datasheet

 ..1. Size:478K  unikc
 p5506bdg.pdf pdf_icon

P5506BDG

P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS = 10V 60V 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 22 ID Continuous Drain Current TC = 100 A C 18 IDM 80 Pulsed Drain Current1

 7.1. Size:215K  niko-sem
 p5506bda.pdf pdf_icon

P5506BDG

N-Channel Enhancement Mode P5506BDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 15A 1. GATE G 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

 8.1. Size:493K  unikc
 p5506bvg.pdf pdf_icon

P5506BDG

P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS =10V 60V 5.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 Tc = 25 C 5.5 ID Continuous Drain Current1 Tc = 70 A C 4.5 IDM Pulsed Drain Current 2

 8.2. Size:240K  niko-sem
 p5506bva.pdf pdf_icon

P5506BDG

N-Channel Enhancement Mode P5506BVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 55m 4.5A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25

MOSTRAR MÁS

Otros transistores... P5102FMA, P5102FMNV, P5103EAG, P5103EMA, P5103EMG, P5503QV, P5504EDG, P5504EVG, 50N06, P5506BVG, P5506HVG, P5506NVG, P2803BMG, P2803HVG, P2803NVG, P2904BD, P5010AV