P5506BVG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

P5506BVG Datasheet (PDF)

..1. Size:493K unikc
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P5506BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS =10V 60V 5.5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 Tc = 25 C 5.5 ID Continuous Drain Current1 Tc = 70 A C 4.5 IDM Pulsed Drain Current 2

7.1. Size:240K niko-sem
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N-Channel Enhancement Mode P5506BVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID G 60V 55m 4.5A G GATE D DRAIN S SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25

8.1. Size:478K unikc
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P5506BDG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 55m @VGS = 10V 60V 22A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 60 V VGS Gate-Source Voltage 20 TC = 25 C 22 ID Continuous Drain Current TC = 100 A C 18 IDM 80 Pulsed Drain Current1

8.2. Size:215K niko-sem
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N-Channel Enhancement Mode P5506BDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free D PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 15A 1. GATE G 2. DRAIN 3. SOURCE S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

Otros transistores... P5102FMNV , P5103EAG , P5103EMA , P5103EMG , P5503QV , P5504EDG , P5504EVG , P5506BDG , IRFP460 , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG , P2904BD , P5010AV , P5015ATF .