All MOSFET. P5506BVG Datasheet

 

P5506BVG Datasheet and Replacement


   Type Designator: P5506BVG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 5.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.055 Ohm
   Package: SOP8
 

 P5506BVG substitution

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P5506BVG Datasheet (PDF)

 ..1. Size:493K  unikc
p5506bvg.pdf pdf_icon

P5506BVG

P5506BVGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS =10V 60V 5.5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20Tc = 25 C5.5IDContinuous Drain Current1Tc = 70 AC4.5IDMPulsed Drain Current 2

 7.1. Size:240K  niko-sem
p5506bva.pdf pdf_icon

P5506BVG

N-Channel Enhancement Mode P5506BVA NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G60V 55m 4.5A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TA = 25

 8.1. Size:478K  unikc
p5506bdg.pdf pdf_icon

P5506BVG

P5506BDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID55m @VGS = 10V60V 22ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C22IDContinuous Drain CurrentTC = 100 AC18IDM80Pulsed Drain Current1

 8.2. Size:215K  niko-sem
p5506bda.pdf pdf_icon

P5506BVG

N-Channel Enhancement Mode P5506BDA NIKO-SEM TO-252 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 55m 15A 1. GATE G2. DRAIN 3. SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V TC = 25

Datasheet: P5102FMNV , P5103EAG , P5103EMA , P5103EMG , P5503QV , P5504EDG , P5504EVG , P5506BDG , IRF640 , P5506HVG , P5506NVG , P2803BMG , P2803HVG , P2803NVG , P2904BD , P5010AV , P5015ATF .

History: SFF150C | IXFH36N60P | QM4014D | AFN4248W | FS16SM-6 | CSD88539ND

Keywords - P5506BVG MOSFET datasheet

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