P5010AV Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P5010AV  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 2 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 5 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 28 nS

Cossⓘ - Capacitancia de salida: 190 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.05 Ohm

Encapsulados: SOP8

  📄📄 Copiar 

 Búsqueda de reemplazo de P5010AV MOSFET

- Selecciónⓘ de transistores por parámetros

 

P5010AV datasheet

 ..1. Size:489K  unikc
 p5010av.pdf pdf_icon

P5010AV

P5010AV N-Channel Logic Level Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 100V 5A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V VGS Gate-Source Voltage 20 TA = 25 C 5 ID Continuous Drain Current1 TA = 100 C 3 A IDM 40 Pulsed Drain

 8.1. Size:336K  unikc
 p5010as.pdf pdf_icon

P5010AV

P5010AS N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50m @VGS = 10V 34A TO-263 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 34 ID Continuous Drain Current TC = 100 C 21 A IDM 120 Pulsed Drain Current1 IAS Avalanche Current 37

 8.2. Size:351K  unikc
 p5010at.pdf pdf_icon

P5010AV

P5010AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 50m @VGS = 10V 30A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 30 ID Continuous Drain Current TC = 100 C 18 A IDM 70 Pulsed Drain Current1

 8.3. Size:575K  unikc
 p5010ad.pdf pdf_icon

P5010AV

P5010AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 50m @VGS = 10V 100V 23A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 23 ID Continuous Drain Current1 TC = 100 C 14 A IDM 90 Pulsed Drain Curren

MOSTRAR MÁS

Otros transistores... P5506BDG, P5506BVG, P5506HVG, P5506NVG, P2803BMG, P2803HVG, P2803NVG, P2904BD, IRFZ44, P5015ATF, P5015BD, P5015BTF, P50N03LTG, P5803NAG, P5806NVG, PB521BX, PV501BA