IRF142 Todos los transistores

 

IRF142 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IRF142

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 100 V

Corriente continua de drenaje (Id): 24 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Carga de compuerta (Qg): 59 nC

Resistencia drenaje-fuente RDS(on): 0.1 Ohm

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de MOSFET IRF142

 

IRF142 Datasheet (PDF)

5.1. irf1404lpbf irf1404spbf.pdf Size:274K _update

IRF142
IRF142

PD -95104 IRF1404SPbF IRF1404LPbF l Advanced Process Technology HEXFET Power MOSFET l Ultra Low On-Resistance l Dynamic dv/dt Rating D l 175°C Operating Temperature VDSS = 40V l Fast Switching l Fully Avalanche Rated RDS(on) = 0.004Ω G l Lead-Free ID = 162A† Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing tec

5.2. irf1404pbf.pdf Size:204K _update

IRF142
IRF142

PD-94968B IRF1404PbF HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 40V l 175°C Operating Temperature l Fast Switching RDS(on) = 0.004Ω l Fully Avalanche Rated G l Lead-Free ID = 202A† S Description Seventh Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to

 5.3. irf1405pbf.pdf Size:258K _update

IRF142
IRF142

PD - 94969B IRF1405PbF Typical Applications HEXFET® Power MOSFET l Industrial motor drive D VDSS = 55V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 5.3mΩ l Dynamic dv/dt Rating G l 175°C Operating Temperature ID = 169A† l Fast Switching S l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description D This Stripe Planar design of HEXF

5.4. irf1404zgpbf.pdf Size:286K _update

IRF142
IRF142

PD - 96236A IRF1404ZGPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 40V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free RDS(on) = 3.7mΩ l Halogen-Free G Description ID = 75A S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low

 5.5. irf1404zlpbf irf1404zpbf irf1404zspbf.pdf Size:298K _update

IRF142
IRF142

PD - 96040C IRF1404ZPbF IRF1404ZSPbF IRF1404ZLPbF Features l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance l 175°C Operating Temperature V(BR)DSS 40V D l Fast Switching RDS(on) typ. 2.7m Ω l Repetitive Avalanche Allowed up to Tjmax max. 3.7m Ω l Lead-Free G ID (Silicon Limited) 180A Description ID (Package Limited) 120A S This HEXFET® P

5.6. irf1405lpbf irf1405spbf.pdf Size:308K _update

IRF142
IRF142

PD-95331A IRF1405SPbF IRF1405LPbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D VDSS = 55V Benefits Advanced Process Technology RDS(on) = 5.3mΩ Ultra Low On-Resistance G Dynamic dv/dt Rating ID = 131A† 175°C Operating Temperature S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description Stripe Planar design of HEXFET® Power MOSFE

5.7. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _upd-mosfet

IRF142
IRF142

PD - 97206B IRF1405ZS-7PPbF IRF1405ZL-7PPbF HEXFET® Power MOSFET Features l Advanced Process Technology D VDSS = 55V l Ultra Low On-Resistance l 175°C Operating Temperature l Fast Switching RDS(on) = 4.9mΩ‰ G l Repetitive Avalanche Allowed up to Tjmax l Lead-Free S ID = 120A S (Pin 2, 3, 5, 6, 7) G (Pin 1) Description This HEXFET® Power MOSFET utilizes the latest pro

5.8. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _upd-mosfet

IRF142
IRF142

PD - 97018A IRF1405ZPbF IRF1405ZSPbF IRF1405ZLPbF Features HEXFET® Power MOSFET l Advanced Process Technology l Ultra Low On-Resistance D l 175°C Operating Temperature VDSS = 55V l Fast Switching l Repetitive Avalanche Allowed up to Tjmax RDS(on) = 4.9mΩ l Lead-Free G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve ex

5.9. irf140smd.pdf Size:22K _upd-mosfet

IRF142
IRF142

IRF140SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N–CHANNEL POWER MOSFET VDSS 100V ID(cont) 13.9A RDS(on) 0.077 FEATURES • HERMETICALLY SEALED SURFACE MOUNT PACKAGE • SMALL FOOTPRINT – EFFICIENT USE OF PCB SPACE. • SIMPLE DRIVE REQUIREMENTS

5.10. irf1407pbf.pdf Size:266K _upd-mosfet

IRF142
IRF142

PD - 95485A IRF1407PbF Typical Applications HEXFET® Power MOSFET Industrial Motor Drive D Benefits VDSS = 75V Advanced Process Technology Ultra Low On-Resistance RDS(on) = 0.0078Ω Dynamic dv/dt Rating G 175°C Operating Temperature Fast Switching ID = 130A† S Repetitive Avalanche Allowed up to Tjmax Description This Stripe Planar design of HEXFET® Power MOSFETs

5.11. irf140-1-2-3.pdf Size:364K _st2

IRF142
IRF142

5.12. irf1404z.pdf Size:181K _international_rectifier

IRF142
IRF142

PD - 11371 AUTOMOTIVE MOSFET IRF1404Z HEXFET Power MOSFET Features D ? Advanced Process Technology VDSS = 40V ? Ultra Low On-Resistance ? 175C Operating Temperature RDS(on) = 3.7m? ? Fast Switching G ? Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

5.13. irf1404s.pdf Size:139K _international_rectifier

IRF142
IRF142

PD -93853B IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

5.14. irf140.pdf Size:144K _international_rectifier

IRF142
IRF142

PD - 90369 REPETITIVE AVALANCHE AND dv/dt RATED IRF140 100V, N-CHANNEL HEXFET?TRANSISTORS THRU-HOLE (TO-204AA/AE) Product Summary Part Number BVDSS RDS(on) ID IRF140 100V 0.077? 28A The HEXFET?technology is the key to International Rectifiers advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest State of the Art design achieves: very

5.15. irf1405z.pdf Size:179K _international_rectifier

IRF142
IRF142

PD - 94645 AUTOMOTIVE MOSFET IRF1405Z HEXFET Power MOSFET Features D l Advanced Process Technology VDSS = 55V l Ultra Low On-Resistance l 175C Operating Temperature RDS(on) = 4.9m? l Fast Switching G l Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest processing techni

5.16. irf1407s.pdf Size:159K _international_rectifier

IRF142
IRF142

PD -94335 IRF1407S IRF1407L Benefits Advanced Process Technology HEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax RDS(on) = 0.0078? Description G Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ID = 1

5.17. irf1405s.pdf Size:154K _international_rectifier

IRF142
IRF142

PD -93992 IRF1405S AUTOMOTIVE MOSFET IRF1405L Typical Applications HEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door RDS(on) = 5.3m? Benefits G Advanced Process Technology ID = 131AV Ultra Low On-Resistance S Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Repetiti

5.18. irf1404.pdf Size:107K _international_rectifier

IRF142
IRF142

PD -91896E IRF1404 HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A S Description Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resi

5.19. irf1407.pdf Size:127K _international_rectifier

IRF142
IRF142

PD - 93907 AUTOMOTIVE MOSFET IRF1407 Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems VDSS = 75V Benefits Advanced Process Technology RDS(on) = 0.0078? Ultra Low On-Resistance G Dynamic dv/dt Rating 175C Operating Temperature ID = 130AV S Fast Switching Repetitive Avalanche Allowed up to Tjmax Description

5.20. irf1404l.pdf Size:306K _international_rectifier

IRF142
IRF142

PD -93853C IRF1404S IRF1404L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 40V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 0.004? Fast Switching G Fully Avalanche Rated ID = 162A Description S Seventh Generation HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely

5.21. irf1405.pdf Size:116K _international_rectifier

IRF142
IRF142

PD -93991A AUTOMOTIVE MOSFET IRF1405 Typical Applications Electric Power Steering (EPS) HEXFET Power MOSFET Anti-lock Braking System (ABS) D Wiper Control VDSS = 55V Climate Control Power Door Benefits RDS(on) = 5.3m? Advanced Process Technology G Ultra Low On-Resistance ID = 169AV Dynamic dv/dt Rating S 175C Operating Temperature Fast Switching Repetitive Avalanch

5.22. irf1404z.pdf Size:2504K _kexin

IRF142
IRF142

DIP Type MOSFET N-Channel MOSFET IRF1404Z (KRF1404Z) TO-220 9.90 ± 0.20 4.50 ± 0.20 (8.70) +0.10 ø3.60 ± 0.10 1.30 –0.05 ■ Features ● VDS (V) = 40V ● ID = 75 A (VGS = 10V) ● RDS(ON) < 3.7mΩ (VGS = 10V) ● Fast Switching 1.27 ± 0.10 1.52 ± 0.10 ● Repetitive Avalanche Allowed up to Tjmax 2 1 3 0.80 ± 0.10 +0.10 0.50 –0.05 2.40 ± 0.20 2.54TYP 2.54T

Otros transistores... IRF1104 , IRF130 , IRF1310N , IRF1310NL , IRF1310NS , IRF140 , IRF1404 , IRF141 , IRF250 , IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 .

 
Back to Top

 


IRF142
  IRF142
  IRF142
  IRF142
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: SIZ710DT | SIZ704DT | SIZ702DT | SIZ342DT | SIZ340DT | SIZ300DT | SIX3439K | SISS40DN | SISS23DN | SISA18DN | SISA18ADN | SISA14DN | SISA12DN | SISA12ADN | SISA10DN |

 

 

 
Back to Top