Аналог (замена) для IRF142

 

 

IRF142 Datasheet (PDF)

..1. irf140 irf141 irf142 irf143.pdf Size:364K _st

9.1. irf1404pbf.pdf Size:204K _international_rectifier

PD-94968BIRF1404PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.004l Fully Avalanche RatedGl Lead-FreeID = 202ASDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

9.2. irf1407.pdf Size:127K _international_rectifier

PD - 93907AUTOMOTIVE MOSFETIRF1407Typical ApplicationsHEXFET Power MOSFET Integrated Starter AlternatorD 42 Volts Automotive Electrical SystemsVDSS = 75VBenefits Advanced Process TechnologyRDS(on) = 0.0078 Ultra Low On-ResistanceG Dynamic dv/dt Rating 175C Operating Temperature ID = 130AVS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescri

 9.3. irf1407s.pdf Size:159K _international_rectifier

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

9.4. irf1404l.pdf Size:306K _international_rectifier

PD -93853CIRF1404SIRF1404LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A DescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve ex

 9.5. irf1405z.pdf Size:179K _international_rectifier

PD - 94645AUTOMOTIVE MOSFETIRF1405ZHEXFET Power MOSFETFeaturesDl Advanced Process TechnologyVDSS = 55Vl Ultra Low On-Resistancel 175C Operating TemperatureRDS(on) = 4.9ml Fast SwitchingGl Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest processin

9.6. irf1405pbf.pdf Size:258K _international_rectifier

PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF

9.7. irf140.pdf Size:144K _international_rectifier

PD - 90369REPETITIVE AVALANCHE AND dv/dt RATED IRF140100V, N-CHANNELHEXFETTRANSISTORSTHRU-HOLE (TO-204AA/AE)Product Summary Part Number BVDSS RDS(on) IDIRF140 100V 0.077 28AThe HEXFETtechnology is the key to InternationalRectifiers advanced line of power MOSFET transistors.The efficient geometry and unique processing of this latestState of the Art design

9.8. auirf1405zs-7p.pdf Size:247K _international_rectifier

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

9.9. irf1405lpbf irf1405spbf.pdf Size:308K _international_rectifier

PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE

9.10. irf1404lpbf irf1404spbf.pdf Size:274K _international_rectifier

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

9.11. auirf1404zstrl.pdf Size:362K _international_rectifier

PD - 97460AUTOMOTIVE GRADEAUIRF1404ZAUIRF1404ZSAUIRF1404ZLFeatures Advanced Process TechnologyHEXFET Power MOSFET Low On-ResistanceDV(BR)DSS 40V 175C Operating Temperature Fast SwitchingRDS(on) max.3.7m Repetitive Avalanche Allowed up to TjmaxGID (Silicon Limited) Lead-Free, RoHS Compliant 180A Automotive Qualified *SID (Package Limited)160A

9.12. auirf1405zstrl.pdf Size:313K _international_rectifier

PD - 97486AAUIRF1405ZSAUTOMOTIVE GRADEAUIRF1405ZLFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-Resistance DV(BR)DSS55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) max.4.9mGl Repetitive Avalanche Allowed up toTjmax S ID150Al Lead-Free, RoHS Compliantl Automotive Qualified *DDDescriptionSpecifically designed for

9.13. irf1404zgpbf.pdf Size:286K _international_rectifier

PD - 96236AIRF1404ZGPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 40Vl Fast Switchingl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeRDS(on) = 3.7ml Halogen-Free GDescription ID = 75ASThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve extremely low

9.14. irf1405s.pdf Size:154K _international_rectifier

PD -93992IRF1405SAUTOMOTIVE MOSFETIRF1405LTypical ApplicationsHEXFET Power MOSFET Electric Power Steering (EPS) Anti-lock Braking System (ABS)D Wiper Control VDSS = 55V Climate Control Power DoorRDS(on) = 5.3mBenefitsG Advanced Process TechnologyID = 131AV Ultra Low On-ResistanceS Dynamic dv/dt Rating 175C Operating Temperature Fast Switching R

9.15. irf1404.pdf Size:107K _international_rectifier

PD -91896EIRF1404HEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A SDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve extremely low

9.16. irf1405zlpbf irf1405zpbf irf1405zspbf.pdf Size:396K _international_rectifier

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

9.17. irf1404z.pdf Size:181K _international_rectifier

PD - 11371AUTOMOTIVE MOSFETIRF1404ZHEXFET Power MOSFETFeaturesD Advanced Process TechnologyVDSS = 40V Ultra Low On-Resistance 175C Operating TemperatureRDS(on) = 3.7m Fast SwitchingG Repetitive Avalanche Allowed up to TjmaxID = 75ASDescriptionSpecifically designed for Automotive applications, this HEXFET PowerMOSFET utilizes the latest

9.18. auirf1404.pdf Size:212K _international_rectifier

PD-97684AUTOMOTIVE GRADEAUIRF1404FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS40Vl Dynamic dv/dt RatingRDS(on) typ.3.5ml 175C Operating Temperature max 4.0ml Fast SwitchingGID (Silicon Limited)202Al Fully Avalanche RatedSl Repetitive Avalanche AllowedID (Package Limited)160Aup to Tjmaxl Lead-Free

9.19. irf1405.pdf Size:116K _international_rectifier

PD -93991AAUTOMOTIVE MOSFETIRF1405Typical Applications Electric Power Steering (EPS)HEXFET Power MOSFET Anti-lock Braking System (ABS)D Wiper ControlVDSS = 55V Climate Control Power DoorBenefits RDS(on) = 5.3m Advanced Process Technology G Ultra Low On-ResistanceID = 169AV Dynamic dv/dt RatingS 175C Operating Temperature Fast Switching Repetitive A

9.20. irf1404zlpbf irf1404zpbf irf1404zspbf.pdf Size:298K _international_rectifier

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

9.21. auirf1405.pdf Size:212K _international_rectifier

PD - 97691AAUTOMOTIVE GRADEAUIRF1405FeaturesHEXFET Power MOSFETl Advanced Planar Technologyl Low On-ResistanceDV(BR)DSS55Vl Dynamic dv/dt RatingRDS(on) typ.4.6ml 175C Operating Temperaturel Fast Switchingmax 5.3mGl Fully Avalanche RatedID (Silicon Limited)169Al Repetitive Avalanche AllowedSup to TjmaxID (Package Limited)75Al Lead-Free,

9.22. irf1407pbf.pdf Size:266K _international_rectifier

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs

9.23. irf1407l.pdf Size:159K _international_rectifier

PD -94335IRF1407SIRF1407LBenefits Advanced Process TechnologyHEXFET Power MOSFET Ultra Low On-Resistance Dynamic dv/dt RatingD 175C Operating TemperatureVDSS = 75V Fast Switching Repetitive Avalanche Allowed up to TjmaxRDS(on) = 0.0078DescriptionGAdvanced HEXFET Power MOSFETs from InternationalRectifier utilize advanced processing techniques to achieve

9.24. irf1404s.pdf Size:139K _international_rectifier

PD -93853BIRF1404SIRF1404LHEXFET Power MOSFET Advanced Process TechnologyD Ultra Low On-ResistanceVDSS = 40V Dynamic dv/dt Rating 175C Operating TemperatureRDS(on) = 0.004 Fast SwitchingG Fully Avalanche RatedID = 162A DescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to achieve ex

9.25. irf1405zl-7ppbf irf1405zs-7ppbf.pdf Size:319K _international_rectifier

PD - 97206BIRF1405ZS-7PPbFIRF1405ZL-7PPbFHEXFET Power MOSFETFeaturesl Advanced Process TechnologyDVDSS = 55Vl Ultra Low On-Resistancel 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120AS (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes the latestpro

9.26. irf1404pbf.pdf Size:208K _infineon

PD-94968BIRF1404PbFHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl Dynamic dv/dt RatingVDSS = 40Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 0.004l Fully Avalanche RatedGl Lead-FreeID = 202ASDescriptionSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtechniques to

9.27. irf1405pbf.pdf Size:258K _infineon

PD - 94969BIRF1405PbFTypical ApplicationsHEXFET Power MOSFETl Industrial motor driveDVDSS = 55VBenefitsl Advanced Process Technologyl Ultra Low On-ResistanceRDS(on) = 5.3ml Dynamic dv/dt Rating Gl 175C Operating TemperatureID = 169Al Fast SwitchingSl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeDescriptionDThis Stripe Planar design of HEXF

9.28. auirf1405zs auirf1405zl.pdf Size:345K _infineon

AUTOMOTIVE GRADE AUIRF1405ZS AUIRF1405ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 55V Ultra Low On-Resistance 175C Operating Temperature RDS(on) max. 4.9m Fast Switching Repetitive Avalanche Allowed up to Tjmax ID 150A Lead-Free, RoHS Compliant Automotive Qualified * D D Description Specifically designed

9.29. irf1404zpbf irf1404zspbf irf1404zlpbf.pdf Size:302K _infineon

PD - 96040CIRF1404ZPbFIRF1404ZSPbFIRF1404ZLPbFFeaturesl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel 175C Operating Temperature V(BR)DSS 40VDl Fast SwitchingRDS(on) typ. 2.7ml Repetitive Avalanche Allowed up to Tjmax max. 3.7ml Lead-FreeGID (Silicon Limited) 180A DescriptionID (Package Limited) 120A SThis HEXFET P

9.30. auirf1405zs-7p.pdf Size:247K _infineon

AUTOMOTIVE GRADEAUIRF1405ZS-7PFeaturesHEXFET Power MOSFETl Advanced Process TechnologyDl Ultra Low On-Resistance VDSS = 55Vl 175C Operating Temperaturel Fast SwitchingRDS(on) = 4.9mGl Repetitive Avalanche Allowed up to Tjmaxl Lead-FreeSID = 120Al Automotive Qualified *S (Pin 2, 3, 5, 6, 7)G (Pin 1)DescriptionThis HEXFET Power MOSFET utilizes thela

9.31. irf1404spbf.pdf Size:274K _infineon

PD -95104IRF1404SPbFIRF1404LPbFl Advanced Process TechnologyHEXFET Power MOSFETl Ultra Low On-Resistancel Dynamic dv/dt RatingDl 175C Operating Temperature VDSS = 40Vl Fast Switchingl Fully Avalanche RatedRDS(on) = 0.004Gl Lead-FreeID = 162ADescriptionSSeventh Generation HEXFET Power MOSFETs fromInternational Rectifier utilize advanced processingtec

9.32. irf1405spbf irf1405lpbf.pdf Size:308K _infineon

PD-95331AIRF1405SPbFIRF1405LPbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDVDSS = 55VBenefits Advanced Process TechnologyRDS(on) = 5.3m Ultra Low On-Resistance G Dynamic dv/dt RatingID = 131A 175C Operating TemperatureS Fast Switching Repetitive Avalanche Allowed up to TjmaxDescriptionStripe Planar design of HEXFET Power MOSFE

9.33. irf1407pbf.pdf Size:266K _infineon

PD - 95485AIRF1407PbFTypical ApplicationsHEXFET Power MOSFET Industrial Motor DriveDBenefitsVDSS = 75V Advanced Process Technology Ultra Low On-ResistanceRDS(on) = 0.0078 Dynamic dv/dt RatingG 175C Operating Temperature Fast SwitchingID = 130AS Repetitive Avalanche Allowed up to TjmaxDescriptionThis Stripe Planar design of HEXFET Power MOSFETs

9.34. irf1405zpbf irf1405zspbf irf1405zlpbf.pdf Size:396K _infineon

PD - 97018AIRF1405ZPbFIRF1405ZSPbFIRF1405ZLPbFFeaturesHEXFET Power MOSFETl Advanced Process Technologyl Ultra Low On-ResistanceDl 175C Operating TemperatureVDSS = 55Vl Fast Switchingl Repetitive Avalanche Allowed up to TjmaxRDS(on) = 4.9ml Lead-FreeGID = 75ADescription SThis HEXFET Power MOSFET utilizes the latestprocessing techniques to achieve ex

9.35. auirf1404z auirf1404zs auirf1404zl.pdf Size:383K _infineon

AUIRF1404Z AUIRF1404ZS AUTOMOTIVE GRADE AUIRF1404ZL HEXFET Power MOSFET Features Advanced Process Technology VDSS 40V Ultra Low On-Resistance RDS(on) max. 3.7m 175C Operating Temperature ID (Silicon Limited) 180A Fast Switching Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 160A Lead-Free, RoHS Compliant Auto

9.36. auirf1404s auirf1404l.pdf Size:303K _infineon

AUIRF1404S AUTOMOTIVE GRADE AUIRF1404L HEXFET Power MOSFET Features Advanced Planar Technology VDSS 40V Dynamic dv/dt Rating RDS(on) typ. 3.5m 175C Operating Temperature max. 4.0m Fast Switching ID (Silicon Limited) 162A Fully Avalanche Rated Repetitive Avalanche Allowed up to Tjmax ID (Package Limited) 75A Lead-F

9.37. irf140smd.pdf Size:22K _semelab

IRF140SMDSEMELABMECHANICAL DATADimensions in mm (inches)NCHANNELPOWER MOSFET VDSS 100V ID(cont) 13.9A RDS(on) 0.077FEATURES HERMETICALLY SEALED SURFACEMOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OFPCB SPACE. SIMPLE DRIVE REQUIREMENTS

9.38. irf1404z.pdf Size:2504K _kexin

DIP Type MOSFETN-Channel MOSFETIRF1404Z (KRF1404Z)TO-2209.90 0.20 4.50 0.20(8.70)+0.103.60 0.10 1.30 0.05 Features VDS (V) = 40V ID = 75 A (VGS = 10V) RDS(ON) 3.7m (VGS = 10V) Fast Switching1.27 0.10 1.52 0.10 Repetitive Avalanche Allowed up to Tjmax21 30.80 0.10 +0.100.50 0.05 2.40 0.202.54TYP 2.54T

9.39. irf1407.pdf Size:245K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF1407IIRF1407FEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYM

9.40. irf1407s.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF1407SFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Volt

9.41. irf1405z.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405ZIIRF1405ZFEATURESStatic drain-source on-resistance:RDS(on) 4.9mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.42. irf1404zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF1404ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

9.43. irf140.pdf Size:227K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF140DESCRIPTIONDrain Current I =27A@ T =25D CDrain Source Voltage-: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =0.085(Max)DS(on)High Power,High Speed ApplicationsMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching power suppliesUPS,AC and DC motor contr

9.44. irf1405s.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

9.45. irf1404.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404IIRF1404FEATURESStatic drain-source on-resistance:RDS(on) 4.0mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM R

9.46. irf1404z.pdf Size:245K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404ZIIRF1404ZFEATURESStatic drain-source on-resistance:RDS(on) 3.7mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.47. irf1405.pdf Size:246K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1405IIRF1405FEATURESStatic drain-source on-resistance:RDS(on) 5.3mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM

9.48. irf1407l.pdf Size:287K _inchange_semiconductor

isc N-Channel MOSFET Transistor IRF1407LFEATURESStatic drain-source on-resistance:RDS(on) 7.8mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONreliable device for use in a wide variety of applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

9.49. irf1404s.pdf Size:252K _inchange_semiconductor

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IRF1404SFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM

9.50. irf1405zs.pdf Size:258K _inchange_semiconductor

Isc N-Channel MOSFET Transistor IRF1405ZSFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vol

     

 

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MOSFET: VS1401ATH | SVG104R5NS | SVG104R5NT | RX80N07 | GWM13S65YRX | GWM13S65YRY | GWM13S65YRD | GWM13S65YRE | DTM4415 | 2SK741 | YSF040N010T1A | YSK038N010T1A | YSP040N010T1A | ZM075N03D | KMK1265F | FNK6075K