P6006BD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P6006BD
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 50 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 21 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.3 nS
Cossⓘ - Capacitancia de salida: 79 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO252
Búsqueda de reemplazo de P6006BD MOSFET
P6006BD Datasheet (PDF)
p6006bd.pdf

P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1
p6006bd.pdf

P6006BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 60m @VGS = 10V 21ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C21IDContinuous Drain CurrentTC = 100 AC17IDM85Pulsed Drain Current1T
p6006bi.pdf

P6006BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60V 65m @VGS = 10V 18ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60VVGSGate-Source Voltage 20TC = 25 C18IDContinuous Drain CurrentTC = 100 C11.8AIDM34Pulsed Drain Current1
p6006hv.pdf

P6006HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V60V 4.5ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 60 VVGSGate-Source Voltage 20 VTA = 25 C4.5IDContinuous Drain CurrentTA= 70 C3.2AIDM20Pulsed Drain Cur
Otros transistores... PV604CA , PV606BA , PV628BA , PV628DA , PV650BA , P6002OAG , P6003QEA , P6004ED , AON7410 , P6006BI , P6006HV , P6010DDG , P6010DTFG , P6010DTG , P6015AD , P6015AT , P6015AV .
History: SPA17N80C3 | STD9HN65M2 | TPP65R075DFD | 2SK1723 | BRD4N65S | SVF12N60CF | RFP12N10L
History: SPA17N80C3 | STD9HN65M2 | TPP65R075DFD | 2SK1723 | BRD4N65S | SVF12N60CF | RFP12N10L



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