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P6015AD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: P6015AD
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 83 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 38 nS
   Cossⓘ - Capacitancia de salida: 225 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
   Paquete / Cubierta: TO252
 

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P6015AD Datasheet (PDF)

 ..1. Size:517K  unikc
 p6015ad.pdf pdf_icon

P6015AD

P6015AD N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM100Pulsed Drain Current1IASAvalanche Current 20

 8.1. Size:342K  unikc
 p6015av.pdf pdf_icon

P6015AD

P6015AVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 60m @VGS = 10V 5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TA = 25 C5IDContinuous Drain CurrentTA = 70 C4AIDM22Pulsed Drain Current1I

 8.2. Size:452K  unikc
 p6015at.pdf pdf_icon

P6015AD

P6015ATN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 26ATO-220ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C26IDContinuous Drain CurrentTC = 100 C16AIDM80Pulsed Drain Current1IASAvalanche Current 21EA

 8.3. Size:321K  ncepower
 ncep6015as.pdf pdf_icon

P6015AD

http://www.ncepower.com NCEP6015ASNCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

MOSTRAR MÁS

Otros transistores... P6003QEA , P6004ED , P6006BD , P6006BI , P6006HV , P6010DDG , P6010DTFG , P6010DTG , 4435 , P6015AT , P6015AV , P6015CDG , P6015CSG , P6402FMG , P6403FMG , P6503FM , P6503FM6 .

History: NVMFS6B14NL | SUU10P10-195

 

 
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