P6015AD - Даташиты. Аналоги. Основные параметры

P6015AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 150V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 25 ID Continuous Drain Current TC = 100 C 16 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 20

P6015AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 60m @VGS = 10V 5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TA = 25 C 5 ID Continuous Drain Current TA = 70 C 4 A IDM 22 Pulsed Drain Current1 I

P6015AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 150V 26A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 26 ID Continuous Drain Current TC = 100 C 16 A IDM 80 Pulsed Drain Current1 IAS Avalanche Current 21 EA

http //www.ncepower.com NCEP6015AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS