P6015AT Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: P6015AT  📄📄 

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 150 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 26 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 40 nS

Cossⓘ - Capacitancia de salida: 200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm

Encapsulados: TO220

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P6015AT datasheet

 ..1. Size:452K  unikc
 p6015at.pdf pdf_icon

P6015AT

P6015AT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 150V 26A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 26 ID Continuous Drain Current TC = 100 C 16 A IDM 80 Pulsed Drain Current1 IAS Avalanche Current 21 EA

 8.1. Size:517K  unikc
 p6015ad.pdf pdf_icon

P6015AT

P6015AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60m @VGS = 10V 150V 25A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 25 ID Continuous Drain Current TC = 100 C 16 A IDM 100 Pulsed Drain Current1 IAS Avalanche Current 20

 8.2. Size:342K  unikc
 p6015av.pdf pdf_icon

P6015AT

P6015AV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 150V 60m @VGS = 10V 5A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage 20 TA = 25 C 5 ID Continuous Drain Current TA = 70 C 4 A IDM 22 Pulsed Drain Current1 I

 8.3. Size:321K  ncepower
 ncep6015as.pdf pdf_icon

P6015AT

http //www.ncepower.com NCEP6015AS NCE N-Channel Super Trench Power MOSFET Description The NCEP6015AS uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high VDS =60V,ID =15A frequency switching performance. Both conduction and RDS(ON)=8.3m (typical) @ VGS=10V switching power losses are minimized due to an extremely low RDS

MOSTRAR MÁS

Otros transistores... P6004ED, P6006BD, P6006BI, P6006HV, P6010DDG, P6010DTFG, P6010DTG, P6015AD, IRF1010E, P6015AV, P6015CDG, P6015CSG, P6402FMG, P6403FMG, P6503FM, P6503FM6, P6503FMA