P6015CDG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: P6015CDG
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 48 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 150 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 20 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 115 nS
Cossⓘ - Capacitancia de salida: 725 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.06 Ohm
Paquete / Cubierta: TO252
- Selección de transistores por parámetros
P6015CDG Datasheet (PDF)
p6015cdg.pdf

P6015CDGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 20ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 12 VTC = 25 C20IDContinuous Drain CurrentTC = 100 C15AIDM60Pulsed Drain Current1IASAvalanche Current 20E
p6015csg.pdf

P6015CSGN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 21ATO-263ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150 VVGSGate-Source Voltage 12 VTC= 25 C21IDContinuous Drain Current2TC= 100 C13AIDM60Pulsed Drain Curren
p6015ad.pdf

P6015AD N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID60m @VGS = 10V150V 25ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C25IDContinuous Drain CurrentTC = 100 C16AIDM100Pulsed Drain Current1IASAvalanche Current 20
p6015av.pdf

P6015AVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID150V 60m @VGS = 10V 5ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 150VVGSGate-Source Voltage 20TA = 25 C5IDContinuous Drain CurrentTA = 70 C4AIDM22Pulsed Drain Current1I
Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: LNG045R210 | UPA1728G | AOTF5N100 | RTU002P02 | NCE70T360I | SQD50N04-5M6 | BUZ900P
History: LNG045R210 | UPA1728G | AOTF5N100 | RTU002P02 | NCE70T360I | SQD50N04-5M6 | BUZ900P



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: DHF10H035R | DHF100N03B13 | DHF035N04 | DHEZ24B31 | DHESJ17N65 | DHESJ13N65 | DHESJ11N65 | DHE9Z24 | DHE90N055R | DHE90N045R | DHE85N08 | DHE8290 | DHE80N08B22 | DHE8004 | DHE50N15 | DHE50N06FZC
Popular searches
irfp360 | bc108 equivalent | irfp4568 | mj15004 | ksc2073 | nte102a | tip31cg | s9015 transistor