IRF153 Todos los transistores

PD -9.1353 IRFI530N PRELIMINARY HEXFET Power MOSFET Advanced Process Technology Isolated Package VDSS = 100V High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm RDS(on) = 0.11 Fully Avalanche Rated ID = 11A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resista

PD - 90337G REPETITIVE AVALANCHE AND dv/dt RATED IRF150 HEXFET TRANSISTORS JANTX2N6764 THRU-HOLE (TO-204AA/AE) JANTXV2N6764 [REF MIL-PRF-19500/543] 100V, N-CHANNEL Product Summary Part Number BVDSS RDS(on) ID IRF150 100V 0.055 38A The HEXFET technology is the key to International Rectifier s advanced line of power MOSFET transistors. The efficient geometry and unique proces

PD - 95432A IRF1503SPbF IRF1503LPbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Benefits l Advanced Process Technology l Ultra Low On-Resistance RDS(on) = 3.3m G l 175 C Operating Temperature l Fast Switching ID = 75A l Repetitive Avalanche Allowed up to Tjmax S Description This Stripe Planar design of HEXFET Power MOSFETs utilizes th

PD-94526A AUTOMOTIVE MOSFET IRF1503 Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Features Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Speci

PD - 94494A IRF1503S IRF1503L Typical Applications HEXFET Power MOSFET 14V Automotive Electrical Systems D 14V Electronic Power Steering VDSS = 30V Benefits Advanced Process Technology RDS(on) = 3.3m Ultra Low On-Resistance G 175 C Operating Temperature Fast Switching ID = 75A S Repetitive Avalanche Allowed up to Tjmax Description Specificall

PD-95438A IRF1503PbF Typical Applications HEXFET Power MOSFET Industrial Motor Drive D VDSS = 30V Features Advanced Process Technology Ultra Low On-Resistance RDS(on) = 3.3m G 175 C Operating Temperature Fast Switching ID = 75A Repetitive Avalanche Allowed up to Tjmax S Description This design of HEXFET Power MOSFETs utilizes the lastest processing techniques to

IRF150P220 MOSFET PG-TO 247-3 StrongIRFET Features Very low R DS(on) Excellent gate charge x R (FOM) DS(on) Optimized Q rr 175 C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 1 2 3 Benefits Reduced conduction losses Ideal for high switching frequency Drain

IRF150P221 MOSFET PG-TO 247-3 StrongIRFET Features Very low R DS(on) Excellent gate charge x R (FOM) DS(on) Optimized Q rr 175 C operating temperature Product validation according to JEDEC standard Optimized for broadest availability from distribution partners 1 2 3 Benefits Reduced conduction losses Ideal for high switching frequency Drain

IRF150SMD SEME LAB MECHANICAL DATA Dimensions in mm (inches) N CHANNEL POWER MOSFET VDSS 100V ID(cont) 19A RDS(on) 0.070 FEATURES HERMETICALLY SEALED SURFACE MOUNT PACKAGE SMALL FOOTPRINT EFFICIENT USE OF PCB SPACE. SIMPLE DRIVE REQUIREMENTS

RoHS IRF150 Series RoHS SEMICONDUCTOR Nell High Power Products N-Channel Power MOSFET 42A, 100Volts DESCRIPTION D The Nell IRF150 is a three-terminal silicon device with current conduction capability of 42A, fast switching speed, low on-state resistance, breakdown voltage rating of 100V, and max. threshold voltage of 4 volts. They are designed for use in applications such as G

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF150 DESCRIPTION Drain Current I =40A@ T =25 D C Drain Source Voltage- V = 100V(Min) DSS Static Drain-Source On-Resistance R =0.055 (Max) DS(on) High Power,High Speed Applications Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching power supplies

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503S FEATURES With TO-263( D2PAK ) packaging High speed switching Low gate input resistance Standard level gate drive Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply Switching applications ABSOLUTE MAXIMUM

INCHANGE Semiconductor isc N-Channel MOSFET Transistor IRF1503 IIRF1503 FEATURES Static drain-source on-resistance RDS(on) 3.3m Enhancement mode Vth =2.0 to 4.0V (VDS = 10 V, ID=250 A) Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION reliable device for use in a wide v