PK650BA MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PK650BA
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 31 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 70 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 311 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
Paquete / Cubierta: PDFN5X6P
Búsqueda de reemplazo de PK650BA MOSFET
PK650BA Datasheet (PDF)
pk650ba.pdf

PK650BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.3m @VGS = 10V30V 70APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C70IDContinuous Drain Current2TC = 100 C44.6IDM100Pulsed Drain Cur
pk650ba.pdf

PK650BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 3.3m 70A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Vol
pk650dy.pdf

Dual N-Channel Enhancement Mode PK650DY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8m 83A Q1 30V 11m 36A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1 : G1 Optimized Gate Charge to Minimize Switch
pk650dy.pdf

Dual N-Channel Enhancement Mode PK650DY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8m 83A Q1 30V 11m 36A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1 : G1 Optimized Gate Charge to Minimize Switch
Otros transistores... PK612DZ , PK615BM6 , PK615BMA , PK616BA , PK618BA , PK626BA , PK632BA , PK636BA , 2N60 , PK664BA , PK696BA , PK698SA , PK6A6BA , PK6B2BA , PK6H2BA , PA002FMA , PA002FMG .
History: PK664BA | PK696BA | PK698SA | AFP2301 | NCE40H12K | MSU8N50Q
History: PK664BA | PK696BA | PK698SA | AFP2301 | NCE40H12K | MSU8N50Q



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