PK650BA
MOSFET. Datasheet pdf. Equivalent
Type Designator: PK650BA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 31
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.3
V
|Id|ⓘ - Maximum Drain Current: 70
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 19
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 311
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0033
Ohm
Package:
PDFN5X6P
PK650BA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
PK650BA
Datasheet (PDF)
..1. Size:730K unikc
pk650ba.pdf
PK650BAN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID3.3m @VGS = 10V30V 70APDFN 5X6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 30 VVGSGate-Source Voltage 20 VTC = 25 C70IDContinuous Drain Current2TC = 100 C44.6IDM100Pulsed Drain Cur
..2. Size:264K niko-sem
pk650ba.pdf
PK650BA NIKO-SEM N-Channel Enhancement Mode PDFN 5x6P Field Effect Transistor Halogen-Free & Lead-Free DD D D DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G30V 3.3m 70A G. GATE D. DRAIN S. SOURCE #1 S S S GSABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 30 V Gate-Source Vol
9.1. Size:575K 1
pk650dy.pdf
Dual N-Channel Enhancement Mode PK650DY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8m 83A Q1 30V 11m 36A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1 : G1 Optimized Gate Charge to Minimize Switch
9.2. Size:575K niko-sem
pk650dy.pdf
Dual N-Channel Enhancement Mode PK650DY NIKO-SEM Field Effect Transistor PDFN 5x6P Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Q2 30V 2.8m 83A Q1 30V 11m 36A Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. Ohmic Region Good RDS(on) Ratio. 1 : G1 Optimized Gate Charge to Minimize Switch
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