PA210BC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: PA210BC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 4.5 nS
Cossⓘ - Capacitancia de salida: 114 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
Paquete / Cubierta: SOT89
Búsqueda de reemplazo de MOSFET PA210BC
PA210BC Datasheet (PDF)
pa210bc.pdf
PA210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 120m @VGS = 10V 3A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 3 ID Continuous Drain Current TA = 70 C 1.9 A IDM 26 Pulsed Drain Current1 IAS Avalanche Current 26 EAS
pa210bl.pdf
PA210BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 120m @VGS = 10V 3A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 3 ID Continuous Drain Current TA = 70 C 1.9 A IDM 25 Pulsed Drain Current1,2 IAS Avalanche Current 25
pa210hk.pdf
PA210HK Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120m @VGS = 10V 100V 8.7A PDFN 5*6P ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TC = 25 C 8.7 ID Continuous Drain Current TC = 100 C 5.5 IDM 25 Pulsed Drai
pa210hv.pdf
PA210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 120m @VGS = 10V 100V 2.8A SOP- 08 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 TA = 25 C 2.8 ID Continuous Drain Current TA = 70 C 2.3 A IDM 25 Pulsed Drai
Otros transistores... PA102FMA , PA102FMG , PA110BC , PA110BD , PA110BDA , PA110BL , PA110BV , PA203EMG , IRLB3034 , PA210BL , PA210HK , PA210HV , PA210HVA , PA406EM , PA410BD , PA502FMG , PA504EM .
History: 2SJ387S
History: 2SJ387S
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