PA210BC Todos los transistores

 

PA210BC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: PA210BC
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 4.5 nS
   Cossⓘ - Capacitancia de salida: 114 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.12 Ohm
   Paquete / Cubierta: SOT89
     - Selección de transistores por parámetros

 

PA210BC Datasheet (PDF)

 ..1. Size:335K  unikc
pa210bc.pdf pdf_icon

PA210BC

PA210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 120m @VGS = 10V 3ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3IDContinuous Drain CurrentTA = 70 C1.9AIDM26Pulsed Drain Current1IASAvalanche Current 26EAS

 8.1. Size:359K  unikc
pa210bl.pdf pdf_icon

PA210BC

PA210BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 120m @VGS = 10V 3A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3IDContinuous Drain CurrentTA = 70 C1.9AIDM25Pulsed Drain Current1,2IASAvalanche Current 25

 9.1. Size:782K  unikc
pa210hk.pdf pdf_icon

PA210BC

PA210HKDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 8.7APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C8.7IDContinuous Drain CurrentTC = 100 C5.5IDM25Pulsed Drai

 9.2. Size:434K  unikc
pa210hv.pdf pdf_icon

PA210BC

PA210HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 2.8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C2.8IDContinuous Drain CurrentTA = 70 C2.3AIDM25Pulsed Drai

Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: PD551BA | NCE4005 | P8806BM | PA610DD | FQP5N50C | IRFI644A

 

 
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