Справочник MOSFET. PA210BC

 

PA210BC MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PA210BC
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 4.5 ns
   Cossⓘ - Выходная емкость: 114 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.12 Ohm
   Тип корпуса: SOT89

 Аналог (замена) для PA210BC

 

 

PA210BC Datasheet (PDF)

 ..1. Size:335K  unikc
 pa210bc.pdf

PA210BC PA210BC

PA210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 120m @VGS = 10V 3ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3IDContinuous Drain CurrentTA = 70 C1.9AIDM26Pulsed Drain Current1IASAvalanche Current 26EAS

 8.1. Size:359K  unikc
 pa210bl.pdf

PA210BC PA210BC

PA210BLN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 120m @VGS = 10V 3A SOT- 223ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C3IDContinuous Drain CurrentTA = 70 C1.9AIDM25Pulsed Drain Current1,2IASAvalanche Current 25

 9.1. Size:782K  unikc
 pa210hk.pdf

PA210BC PA210BC

PA210HKDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 8.7APDFN 5*6PABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TC = 25 C8.7IDContinuous Drain CurrentTC = 100 C5.5IDM25Pulsed Drai

 9.2. Size:434K  unikc
 pa210hv.pdf

PA210BC PA210BC

PA210HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 2.8ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C2.8IDContinuous Drain CurrentTA = 70 C2.3AIDM25Pulsed Drai

 9.3. Size:447K  unikc
 pa210hva.pdf

PA210BC PA210BC

PA210HVADual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID120m @VGS = 10V100V 2.3ASOP- 08ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100VVGSGate-Source Voltage 20TA = 25 C2.3IDContinuous Drain CurrentTA = 70 C1.8AIDM20Pulsed Dra

 9.4. Size:417K  niko-sem
 pa210hva.pdf

PA210BC PA210BC

PA210HVA Dual N-Channel Enhancement Mode NIKO-SEM SOP-8 Field Effect Transistor Halogen-Free & Lead-Free DPRODUCT SUMMARY V(BR)DSS RDS(ON) ID G100V 110m 2.8A G: GATE D: DRAIN S: SOURCE SABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS 20 V

Другие MOSFET... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

 

 
Back to Top