PA610DD MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PA610DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200m @VGS = -10V -100V -10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 30 TC = 25 C -10 ID Continuous Drain Current TC = 100 C -8 A IDM -28 Pulsed Drain

PA610DTF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200m @VGS = -10V -100V -10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -10 ID Continuous Drain Current TC = 100 C -8 A IDM -40 Pulsed Dr

PA610AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 160m @VGS = 10V 100V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 12 ID Continuous Drain Current TC = 100 C 7 A IDM 40 Pulsed Drain Current1 IAS Avalanche Current 24 EA

PA610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 160m @VGS = 10V 100V 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 8 ID Continuous Drain Current TC = 100 C 5.4 A IDM 32 Pulsed Drain Current1 IAS Avalanche Current 8 E

PA610NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 160m @VGS =10V 100V 2.5A N 200m @VGS = -10V -100V -2.2A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 100 VDS Drain-Source Voltage P -100 V N 30 VGS Gate-Source Voltage P 30 N 2.5 TA = 25 C P -2.2