All MOSFET. PA610DD Equivalents Search

 

PA610DD Spec and Replacement


   Type Designator: PA610DD
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 36 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.2 Ohm
   Package: TO252

 PA610DD Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

PA610DD Specs

 ..1. Size:540K  unikc
 pa610dd.pdf pdf_icon

PA610DD

PA610DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200m @VGS = -10V -100V -10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 30 TC = 25 C -10 ID Continuous Drain Current TC = 100 C -8 A IDM -28 Pulsed Drain ... See More ⇒

 8.1. Size:370K  unikc
 pa610dtf.pdf pdf_icon

PA610DD

PA610DTF P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200m @VGS = -10V -100V -10A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 20 TC = 25 C -10 ID Continuous Drain Current TC = 100 C -8 A IDM -40 Pulsed Dr... See More ⇒

 9.1. Size:380K  unikc
 pa610ad.pdf pdf_icon

PA610DD

PA610AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 160m @VGS = 10V 100V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 12 ID Continuous Drain Current TC = 100 C 7 A IDM 40 Pulsed Drain Current1 IAS Avalanche Current 24 EA... See More ⇒

 9.2. Size:532K  unikc
 pa610atf.pdf pdf_icon

PA610DD

PA610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 160m @VGS = 10V 100V 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 8 ID Continuous Drain Current TC = 100 C 5.4 A IDM 32 Pulsed Drain Current1 IAS Avalanche Current 8 E... See More ⇒

SHOW MORE

Detailed specifications: PA410BD , PA502FMG , PA504EM , PA504EV , PA606BMG , PA606HAG , PA610AD , PA610ATF , IRFZ44N , PA610DTF , PA610NV , PB5A2BA , PB5G2JU , PE5A0DZ , PE5A1BA , PE5G6EA , PK5A1BA .

Keywords - PA610DD MOSFET specs

 PA610DD cross reference
 PA610DD equivalent finder
 PA610DD lookup
 PA610DD substitution
 PA610DD replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
Back to Top

 


 
.