PA610NV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PA610NV
   Tipo de FET: MOSFET
   Polaridad de transistor: NP

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 2.2 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 28 nC
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.16 Ohm
   Paquete / Cubierta: SOP8

Búsqueda de reemplazo de MOSFET PA610NV

PA610NV Datasheet (PDF)

..1. Size:847K unikc
pa610nv.pdf

PA610NVN&P-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID Channel160m @VGS =10V100V 2.5A N200m @VGS = -10V-100V -2.2A PSOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITSN 100VDSDrain-Source VoltageP -100VN 30VGSGate-Source VoltageP 30N 2.5TA = 25 CP -2.2

9.1. Size:380K unikc
pa610ad.pdf

PA610ADN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V100V 12ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C12IDContinuous Drain CurrentTC = 100 C7AIDM40Pulsed Drain Current1IASAvalanche Current 24EA

9.2. Size:540K unikc
pa610dd.pdf

PA610DDP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200m @VGS = -10V-100V -10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 30TC = 25 C-10IDContinuous Drain CurrentTC = 100 C-8AIDM-28Pulsed Drain

9.3. Size:532K unikc
pa610atf.pdf

PA610ATFN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID160m @VGS = 10V100V 8ATO-220FABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5.4AIDM32Pulsed Drain Current1IASAvalanche Current 8E

9.4. Size:370K unikc
pa610dtf.pdf

PA610DTFP-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID200m @VGS = -10V -100V -10ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage -100VVGSGate-Source Voltage 20TC = 25 C-10IDContinuous Drain CurrentTC = 100 C-8AIDM-40Pulsed Dr

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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