PA610NV Datasheet. Specs and Replacement

Type Designator: PA610NV  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 2.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm

Package: SOP8

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PA610NV datasheet

 ..1. Size:847K  unikc
 pa610nv.pdf pdf_icon

PA610NV

PA610NV N&P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID Channel 160m @VGS =10V 100V 2.5A N 200m @VGS = -10V -100V -2.2A P SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL CH. LIMITS UNITS N 100 VDS Drain-Source Voltage P -100 V N 30 VGS Gate-Source Voltage P 30 N 2.5 TA = 25 C P -2.2... See More ⇒

 9.1. Size:380K  unikc
 pa610ad.pdf pdf_icon

PA610NV

PA610AD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 160m @VGS = 10V 100V 12A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 12 ID Continuous Drain Current TC = 100 C 7 A IDM 40 Pulsed Drain Current1 IAS Avalanche Current 24 EA... See More ⇒

 9.2. Size:540K  unikc
 pa610dd.pdf pdf_icon

PA610NV

PA610DD P-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 200m @VGS = -10V -100V -10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage -100 V VGS Gate-Source Voltage 30 TC = 25 C -10 ID Continuous Drain Current TC = 100 C -8 A IDM -28 Pulsed Drain ... See More ⇒

 9.3. Size:532K  unikc
 pa610atf.pdf pdf_icon

PA610NV

PA610ATF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 160m @VGS = 10V 100V 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 8 ID Continuous Drain Current TC = 100 C 5.4 A IDM 32 Pulsed Drain Current1 IAS Avalanche Current 8 E... See More ⇒

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Detailed specifications: PA504EM, PA504EV, PA606BMG, PA606HAG, PA610AD, PA610ATF, PA610DD, PA610DTF, IRF740, PB5A2BA, PB5G2JU, PE5A0DZ, PE5A1BA, PE5G6EA, PK5A1BA, PK5C8EA, PK5G6EA

Keywords - PA610NV MOSFET specs

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