IRF2807L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF2807L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 200 W
Tensión drenaje-fuente (Vds): 75 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 82 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 106.7 nC
Resistencia drenaje-fuente RDS(on): 0.013 Ohm
Empaquetado / Estuche: TO262
Búsqueda de reemplazo de MOSFET IRF2807L
IRF2807L Datasheet (PDF)
1.1. irf2807lpbf irf2807spbf.pdf 
Size:272K _international_rectifier
PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175°C Operating Temperature l Fast Switching RDS(on) = 13mΩ l Fully Avalanche Rated G l Lead-Free ID = 82A‡ Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques
3.1. irf2807z.pdf Size:173K _international_rectifier
PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest
3.2. irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Size:399K _international_rectifier
PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mΩ G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techni
3.3. irf2807.pdf Size:207K _international_rectifier
PD - 91517 IRF2807 HEXFET Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si
3.4. irf2807s.pdf Size:124K _international_rectifier
PD - 94170 IRF2807S IRF2807L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist
3.5. irf2807pbf.pdf Size:233K _international_rectifier
PD - 94970A IRF2807PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 75V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 13mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex
3.6. irf2807z.pdf Size:246K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF2807Z, IIRF2807Z ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤8.4mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Synchronous Rectifier applications ·Resonant mode power supplies ·Battery powered circuits ·ABSO
3.7. irf2807.pdf Size:245K _inchange_semiconductor
isc N-Channel MOSFET Transistor IRF2807，IIRF2807 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤13mΩ ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·reliable device for use in a wide variety of applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMB
3.8. irf2807s.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF2807S ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Volt
3.9. irf2807zs.pdf Size:258K _inchange_semiconductor
Isc N-Channel MOSFET Transistor IRF2807ZS ·FEATURES ·With To-263(D2PAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol
Otros transistores... IRF143 , IRF150 , IRF151 , IRF153 , IRF230 , IRF240 , IRF250 , IRF2807 , IRF640N , IRF2807S , IRF3205 , IRF3205L , IRF3205S , IRF330 , IRF3315 , IRF3315L , IRF3315S .
