IRF2807L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: IRF2807L
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 200 W
Tensión drenaje-fuente (Vds): 75 V
Tensión compuerta-fuente (Vgs): 10 V
Corriente continua de drenaje (Id): 82 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4 V
Carga de compuerta (Qg): 106.7 nC
Resistencia drenaje-fuente RDS(on): 0.013 Ohm
Empaquetado / Estuche: TO262
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IRF2807L Datasheet (PDF)
1.1. irf2807lpbf irf2807spbf.pdf 
Size:272K _international_rectifier
PD - 95945 IRF2807SPbF IRF2807LPbF l Advanced Process Technology HEXFET® Power MOSFET l Ultra Low On-Resistance D l Dynamic dv/dt Rating VDSS = 75V l 175°C Operating Temperature l Fast Switching RDS(on) = 13mΩ l Fully Avalanche Rated G l Lead-Free ID = 82A‡ Description S Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques
3.1. irf2807.pdf Size:207K _international_rectifier
PD - 91517 IRF2807 HEXFET Power MOSFET Advanced Process Technology D VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? G Fast Switching Fully Avalanche Rated ID = 82A S Description Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per si
3.2. irf2807zlpbf irf2807zpbf irf2807zspbf.pdf Size:399K _international_rectifier
PD - 95488A IRF2807ZPbF IRF2807ZSPbF Features IRF2807ZLPbF Advanced Process Technology HEXFET® Power MOSFET Ultra Low On-Resistance Dynamic dv/dt Rating D 175°C Operating Temperature VDSS = 75V Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free RDS(on) = 9.4mΩ G ID = 75A Description S This HEXFET® Power MOSFET utilizes the latest processing techni
3.3. irf2807pbf.pdf Size:233K _international_rectifier
PD - 94970A IRF2807PbF HEXFET® Power MOSFET l Advanced Process Technology D l Ultra Low On-Resistance VDSS = 75V l Dynamic dv/dt Rating l 175°C Operating Temperature RDS(on) = 13mΩ l Fast Switching G l Fully Avalanche Rated l Lead-Free ID = 82A‡ S Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve ex
3.4. irf2807s.pdf Size:124K _international_rectifier
PD - 94170 IRF2807S IRF2807L HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance VDSS = 75V Dynamic dv/dt Rating 175C Operating Temperature RDS(on) = 13m? Fast Switching G Fully Avalanche Rated ID = 82A Description S Advanced HEXFET Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resist
3.5. irf2807z.pdf Size:173K _international_rectifier
PD - 94659 IRF2807Z AUTOMOTIVE MOSFET HEXFET Power MOSFET Features D Advanced Process Technology VDSS = 75V Ultra Low On-Resistance Dynamic dv/dt Rating RDS(on) = 9.4m? 175C Operating Temperature G Fast Switching Repetitive Avalanche Allowed up to Tjmax ID = 75A S Description Specifically designed for Automotive applications, this HEXFET Power MOSFET utilizes the latest
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