PB210BM MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: PB210BM
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 0.75 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 1.3 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2 V
   Qgⓘ - Carga de la puerta: 15 nC
   trⓘ - Tiempo de subida: 330 nS
   Cossⓘ - Capacitancia de salida: 80 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.23 Ohm
   Paquete / Cubierta: SOT23

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PB210BM Datasheet (PDF)

..1. Size:912K unikc
pb210bm.pdf

PB210BMN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 1.3ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C1.3IDContinuous Drain CurrentTA = 100 C0.8AIDM18Pulsed Drain Current1IASAvalanche Current 1

8.1. Size:383K unikc
pb210bd.pdf

PB210BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C10IDContinuous Drain CurrentTC = 100 C6AIDM40Pulsed Drain Current1IASAvalanche Current 18EA

8.2. Size:372K unikc
pb210btf.pdf

PB210BTF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 230m @VGS = 10V 8ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5AIDM30Pulsed Drain Current1IASAvalanche Current 18E

8.3. Size:456K unikc
pb210bv.pdf

PB210BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 2.1ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C2.1IDContinuous Drain Current1TA = 70 C1.7AIDM17Pulsed Drain Curre

8.4. Size:484K unikc
pb210bi.pdf

PB210BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 9ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C9IDContinuous Drain Current2TC = 100 C6AIDM14Pulsed Drain Current

8.5. Size:474K unikc
pb210bc.pdf

PB210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID240m @VGS = 10V100V 2.2ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C2.2IDContinuous Drain CurrentTA = 100 C1.8AIDM8Pulsed Drain Current1IASAvalanche Current 6

8.6. Size:906K cn vbsemi
pb210bd.pdf

PB210BDwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

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