Справочник MOSFET. PB210BM

 

PB210BM MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: PB210BM
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 0.75 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 2 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 1.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 15 nC
   trⓘ - Время нарастания: 330 ns
   Cossⓘ - Выходная емкость: 80 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.23 Ohm
   Тип корпуса: SOT23

 Аналог (замена) для PB210BM

 

 

PB210BM Datasheet (PDF)

 ..1. Size:912K  unikc
 pb210bm.pdf

PB210BM PB210BM

PB210BMN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 1.3ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C1.3IDContinuous Drain CurrentTA = 100 C0.8AIDM18Pulsed Drain Current1IASAvalanche Current 1

 8.1. Size:383K  unikc
 pb210bd.pdf

PB210BM PB210BM

PB210BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C10IDContinuous Drain CurrentTC = 100 C6AIDM40Pulsed Drain Current1IASAvalanche Current 18EA

 8.2. Size:372K  unikc
 pb210btf.pdf

PB210BM PB210BM

PB210BTF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 230m @VGS = 10V 8ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5AIDM30Pulsed Drain Current1IASAvalanche Current 18E

 8.3. Size:456K  unikc
 pb210bv.pdf

PB210BM PB210BM

PB210BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 2.1ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C2.1IDContinuous Drain Current1TA = 70 C1.7AIDM17Pulsed Drain Curre

 8.4. Size:484K  unikc
 pb210bi.pdf

PB210BM PB210BM

PB210BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 9ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C9IDContinuous Drain Current2TC = 100 C6AIDM14Pulsed Drain Current

 8.5. Size:474K  unikc
 pb210bc.pdf

PB210BM PB210BM

PB210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID240m @VGS = 10V100V 2.2ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C2.2IDContinuous Drain CurrentTA = 100 C1.8AIDM8Pulsed Drain Current1IASAvalanche Current 6

 8.6. Size:906K  cn vbsemi
 pb210bd.pdf

PB210BM PB210BM

PB210BDwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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