PB210HV MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PB210HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 230m @VGS = 10V 100V 2A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V VGS Gate-Source Voltage 20 TA = 25 C 2 ID Continuous Drain Current TA = 70 C 1.6 A IDM 18 Pulsed Drain Curre

PB210BD N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 230m @VGS = 10V 100V 10A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 10 ID Continuous Drain Current TC = 100 C 6 A IDM 40 Pulsed Drain Current1 IAS Avalanche Current 18 EA

PB210BTF N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 100V 230m @VGS = 10V 8A TO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TC = 25 C 8 ID Continuous Drain Current TC = 100 C 5 A IDM 30 Pulsed Drain Current1 IAS Avalanche Current 18 E

PB210BV N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 230m @VGS = 10V 100V 2.1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Drain-Source Voltage VDS 100 V VGS Gate-Source Voltage 20 TA = 25 C 2.1 ID Continuous Drain Current1 TA = 70 C 1.7 A IDM 17 Pulsed Drain Curre

PB210BM N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 230m @VGS = 10V 100V 1.3A SOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 1.3 ID Continuous Drain Current TA = 100 C 0.8 A IDM 18 Pulsed Drain Current1 IAS Avalanche Current 1

PB210BI N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 230m @VGS = 10V 100V 9A TO-251 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage 20 V TC = 25 C 9 ID Continuous Drain Current2 TC = 100 C 6 A IDM 14 Pulsed Drain Current

PB210BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 240m @VGS = 10V 100V 2.2A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VGS Gate-Source Voltage 20 V TA = 25 C 2.2 ID Continuous Drain Current TA = 100 C 1.8 A IDM 8 Pulsed Drain Current1 IAS Avalanche Current 6

PB210BD www.VBsemi.tw N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature 100 0.11 4 at VGS = 10 V 15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Primary Side Switch D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (