PB210HVDual N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 2ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C2IDContinuous Drain CurrentTA = 70 C1.6AIDM18Pulsed Drain Curre

PB210BDN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 10ATO-252ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C10IDContinuous Drain CurrentTC = 100 C6AIDM40Pulsed Drain Current1IASAvalanche Current 18EA

PB210BTF N-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID100V 230m @VGS = 10V 8ATO-220F ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTC = 25 C8IDContinuous Drain CurrentTC = 100 C5AIDM30Pulsed Drain Current1IASAvalanche Current 18E

PB210BVN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 2.1ASOP-8ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSDrain-Source Voltage VDS 100VVGSGate-Source Voltage 20TA = 25 C2.1IDContinuous Drain Current1TA = 70 C1.7AIDM17Pulsed Drain Curre

PB210BMN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 1.3ASOT-23 ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C1.3IDContinuous Drain CurrentTA = 100 C0.8AIDM18Pulsed Drain Current1IASAvalanche Current 1

PB210BIN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID230m @VGS = 10V100V 9ATO-251ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVDSDrain-Source Voltage 100 VVGSGate-Source Voltage 20 VTC = 25 C9IDContinuous Drain Current2TC = 100 C6AIDM14Pulsed Drain Current

PB210BCN-Channel Enhancement Mode MOSFETPRODUCT SUMMARYV(BR)DSS RDS(ON) ID240m @VGS = 10V100V 2.2ASOT-89ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted)PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITSVGSGate-Source Voltage 20 VTA = 25 C2.2IDContinuous Drain CurrentTA = 100 C1.8AIDM8Pulsed Drain Current1IASAvalanche Current 6

PB210BDwww.VBsemi.twN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A) 175 C Junction Temperature1000.11 4 at VGS = 10 V15 PWM Optimized 100 % Rg Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Primary Side SwitchDTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (