PB600BA MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

PB600BA datasheet

..1. Size:407K unikc
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PB600BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 12m @VGS = 10V 30V 9A PDFN 2X2S ABSOLUTE MAXIMUM RATINGS (TA = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS VDS Drain-Source Voltage 30 V VGS Gate-Source Voltage 20 V TA = 25 C 9 ID Continuous Drain Current2 TA= 70 C 7.2 A IDM 27 Pulsed Drain Current

8.1. Size:351K niko-sem
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PB600BX N-Channel Enhancement Mode NIKO-SEM PDFN 2x2S Field Effect Transistor Halogen-Free & Lead-Free PRODUCT SUMMARY V(BR)DSS RDS(ON) ID D 30V 12m 10A G Features Pb-Free, Halogen Free and RoHS compliant. Low RDS(on) to Minimize Conduction Losses. S Ohmic Region Good RDS(on) Ratio. Optimized Gate Charge to Minimize Switching Losses. Applicatio

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ipb600n25n3g ipp600n25n3g ipi600n25n3g ipp600n25n3g ipb600n25n3g ipi600n25n3g.pdf pdf_icon

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Isc N-Channel MOSFET Transistor IPB600N25N3G FEATURES With To-263(D2PAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source

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